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FQB16N25C/FQI16N25C
250V N-Channel MOSFET
Features
• 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V
• Low gate charge ( typical 41nC)
• Low Crss ( typical 68pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
June 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
G
S
FQB16N25C / FQI16N25C
250
15.6
9.8
62.4
± 30
410
15.6
13.9
5.5
3.13
139
1.11
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
FQB16N25C / FQI16N25C
0.9
40
62.5
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQB16N25C/FQI16N25C Rev. A1
1
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Package Marking and Ordering Information
Device Marking
FQB16N25C
FQI16N25C
Device
FQB16N25CTM
FQI16N25CTU
Package
D2-PAK
I2-PAK
Reel Size
330mm
--
Tape Width
24mm
--
Quantity
800
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 7.8A
VDS = 40 V, ID = 7.8 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 125 V, ID = 15.6A,
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 200 V, ID = 15.6A,
VGS = 10 V
Qgd Gate-Drain Charge
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 15.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 15.6 A,
dIF / dt = 100 A/µs
(Note 4)
250
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, IAS = 15.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 15.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.31
--
--
--
--
--
0.22
10.5
830
170
68
15
130
135
105
41
5.6
22.7
--
--
--
260
2.47
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
0.27
-- S
1080
220
89
pF
pF
pF
40
270
280
220
53.5
--
--
ns
ns
ns
ns
nC
nC
nC
15.6 A
62.4 A
1.5 V
-- ns
-- µC
FQB16N25C/FQI16N25C Rev. A1
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
Notes :
1. 250µ s Pulse Test
2. TC = 25
10-1
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.5
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
10-1
2468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
1.0
VGS = 10V
0.5
VGS = 20V
Note : TJ = 25
0.0
0
10 20 30 40 50
ID, Drain Current [A]
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
1500
1000
Ciss
Coss
Crss
500 Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 50V
VDS = 125V
8 VDS = 200V
6
4
2
Note : ID = 15.6A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
FQB16N25C/FQI16N25C Rev. A1
3
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2 3.0
2.5
1.1
2.0
1.0 1.5
0.9 Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
200
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 7.8 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
102 is Limited by RDS(on)
100 µs
1 ms
101 10 ms
DC
16
12
8
100 Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100 101 102
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
4
0
25 50 75 100 125 150
TC, Case Temperature [ ]
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .05
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
N otes :
1 . Z θJC(t) = 0 .9 0 /W M a x.
2 . D u ty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
FQB16N25C/FQI16N25C Rev. A1
4
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB16N25C/FQI16N25C Rev. A1
5
www.fairchildsemi.com