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STB16PF06L
P-CHANNEL 60V - 0.11- 16A D2PAK
STripFET™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STB16PF06L 60 V < 0.125
s TYPICAL RDS(on) = 0.11
s LOW THRESHOLD DEVICE
s LOW GATE CHARGE
ID
16 A
Pw
70 W
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL
s DC-DC CONVERTERS
Figure 1: Package
3
1
D2PAK
TO-263
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
PART NUMBER
STB16PF06LT4
MARKING
B16PF06L
PACKAGE
D2PAK
PACKAGING
TAPE & REEL
September 2004
Rev. 1
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STB16PF06L
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 16A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C , ID = 8 A , VDD = 30 V
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Value
60
60
± 16
16
11.4
64
70
0.4
20
250
- 55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-PCB(#) Thermal Resistance Junction-PCB Max
Tl Maximum Lead Temperature For Soldering
Purpose (1.6 mm frrom case, for 10sec)
(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
2.14
34
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100µA
1.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 8 A
VGS = 5V, ID = 8 A
0.11 0.125
0.130 0.165
Unit
V
µA
µA
nA
V
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STB16PF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
gfs Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 10 V, ID = 3 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VDD = 30 V, ID = 8 A, RG = 4.7
VGS = 4.5 V
(Resistive Load , Figure 1)
VDD = 48 V, ID = 16 A,
VGS = 4.5V
(See test circuit, Figure 2)
Table 7: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 16 A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see test circuit, Figure 3)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
7.2
630
121
49
129
90
25.5
19.5
11.4
5.2
4.7
Typ.
48.5
87.3
3.6
Max.
Unit
S
pF
pF
pF
15.5
ns
ns
ns
ns
nC
nC
nC
Max.
16
64
1.3
Unit
A
A
V
ns
nC
A
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STB16PF06L
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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STB16PF06L
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature
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