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STB180N55
STP180N55
N-CHANNEL 55V - 2.9m- 120A - D²PAK - TO-220
MDmesh™ Low Voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB180N55
STP180N55
VDSS
55V
55V
RDS(on)
3.5m
3.8m
ID
120A (Note 1)
120A (Note 1)
ULTRA LOW ON-RESISTANCE
100% AVALANCHE TESTED
Description
This N-Channel enhancement mode MOSFET is
the latest refinement of STMicroelectronic unique
“Single Feature Size™“ strip-based process with
less critical aligment steps and therefore a
remarkable manufacturing reproducibility. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
HIGH CURRENT SWITCHING APPLICATION
3
1
D²PAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Sales Type
STB180N55
STP180N55
Marking
B180N55
P180N55
Package
D²PAK
TO-220
Packaging
TAPE & REEL
TUBE
January 2006
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
Rev 1
1/11
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11

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1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Note 1 Drain Current (continuous) at TC = 25°C
ID Note 1 Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt Peak Diode Recovery voltage slope
EAS Note 4 Single Pulse Avalanche Energy
Tj Operating Junction Temperature
Tstg Storage Temperature
Table 2. Thermal data
Rthj-case
Rthj-a
Rthj-pcb
Note 5
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
STP180N55 - STB180N55
Value
55
± 20
120
120
480
315
2.1
TBD
TBD
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
TO-220
62.5
--
0.48
300
D²PAK
--
35
--
Unit
°C/W
°C/W
°C/W
°C
2/11

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STP180N55 - STB180N55
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On
Resistance
Test Conditions
Min.
ID = 250µA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
55
VGS = ±20V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 60A D²PAK
TO-220
2
Typ.
Max.
10
100
±200
4
3.5
3.8
Unit
V
µA
µA
nA
V
m
m
Table 4. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 3
Ciss
Coss
Crss
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 60A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=44V, ID = 120A
VGS =10V
(see Figure 2)
Min.
Typ.
TBD
6200
1800
100
110
TBD
TBD
Max.
TBD
Unit
S
pF
pF
pF
nC
nC
nC
3/11

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2 Electrical characteristics
STP180N55 - STB180N55
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Off voltage Rise Time
FallTime
Test Conditions
VDD=27V, ID= 60A,
RG=4.7Ω, VGS=10V
(see Figure 3)
VDD=27V, ID= 60A,
RG=4.7Ω, VGS=10V
(see Figure 3)
Min.
Table 6. Source drain diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM Note 2 Source-drain Current (pulsed)
VSDNote 3 Forward on Voltage
ISD=120A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=120A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
Min.
Typ. Max. Unit
TBD
TBD
ns
ns
TBD
TBD
ns
ns
Typ.
TBD
TBD
TBD
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(4) Starting Tj=25°C, Id=60A, Vdd=40V
(5) When mounted o inch² FR4 2oz Cu
4/11

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STP180N55 - STB180N55
3 Test circuits
3 Test circuits
Figure 1. Switching Times Test Circuit For
Resistive Load
Figure 2. Gate Charge Test Circuit
Figure 3. Test Circuit For Indictive Load
Switching and Diode Recovery
Times
Figure 5. Unclamped Inductive Load Test
Circuit
Figure 4. Unclamped Inductive Waveform Figure 6. Switching Time Waveform
5/11