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(PNP) 2N6034, 2N6035,

2N6036; (NPN) 2N6038,

2N6039

Plastic Darlington

Complementary Silicon

Power Transistors

Plastic Darlington complementary silicon power transistors are

designed for general purpose amplifier and low−speed switching

applications.

Features

• ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol Value Unit

Collector−Emitter Voltage

2N6034 VCEO 40 Vdc

2N6035, 2N6038

2N6036, 2N6039

Collector−Base Voltage

2N6034 VCBO 40 Vdc

2N6035, 2N6038

2N6036, 2N6039

Emitter−Base Voltage

Collector Current

VEBO 5.0 Vdc

Continuous

Peak

4.0 Adc

8.0 Apk

Base Current

Total Device Dissipation @ TC = 25°C

Derate above 25°C

IB 100 mAdc

PD 40 W

320 mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD 1.5 W

12 mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to

+ 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

3.12 °C/W

Thermal Resistance, Junction−to−Ambient

RqJA

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

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4.0 AMPERES DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

40, 60, 80 VOLTS, 40 WATTS

321

TO−225AA

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

N603xG

2N603x

= Year

= Work Week

= Device Code

x = 4, 5, 6, 8, 9

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

May, 2006 − Rev. 13

Publication Order Number:

2N6035/D

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

2N6034

2N6035, 2N6038

2N6036, 2N6039

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0)

(VCE = 60 Vdc, IB = 0)

(VCE = 80 Vdc, IB = 0)

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0)

(VCB = 80 Vdc, IE = 0)

Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

2N6034

2N6035, 2N6038

2N6036, 2N6039

2N6034

2N6035, 2N6038

2N6036, 2N6039

2N6034

2N6035, 2N6038

2N6036, 2N6039

2N6034

2N6035, 2N6038

2N6036, 2N6039

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

(IC = 4.0 Adc, IB = 40 mAdc)

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 40 mAdc)

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 3.0 Vdc)

DYNAMIC CHARACTERISTICS

Small−Signal Current−Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

*Indicates JEDEC Registered Data.

2N6034, 2N6035, 2N6036

2N6038, 2N6039

Symbol

VCEO(sus)

ICEO

ICEX

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

|hfe|

Cob

Min Max Unit

Vdc

40 −

60 −

80 −

− 100

− 500

mAdc

− 0.5

− 2.0 mAdc

500 −

750 15,000

100 −

−

Vdc

− 2.0

− 3.0

− 4.0 Vdc

− 2.8 Vdc

25 −

−

− 200

− 100

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

VCC

−30 V

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

TUT

SCOPE

approx

+8.0 V

51 D1

≈ 8.0 k ≈ 60

approx

−12 V

25 ms

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

+4.0 V

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

Figure 1. Switching Times Test Circuit

4.0

VCC = 30 V IB1 = IB2

IC/IB = 250 TJ = 25°C

2.0

1.0

0.8

0.6 tr

0.4

0.2

0.04 0.06

td @ VBE(off) = 0

PNP

NPN

0.1 0.2 0.4 0.6 1.0

IC, COLLECTOR CURRENT (AMP)

2.0

4.0

Figure 2. Switching Times

1.0

0.7 D = 0.5

0.5

0.3 0.2

0.2

0.1

0.1 0.05

0.07 0.02

0.05

0.03

0.01

SINGLE PULSE

0.02

0.01

0.01 0.02 0.03 0.05 0.1

qJC(t) = r(t) qJC

P(pk)

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

DUTY CYCLE, D = t1/t2

0.2 0.3

0.5 1.0 2.0 3.0 5.0 10 20

t, TIME (ms)

Figure 3. Thermal Response

100 200 300 500 1000

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

ACTIVE−REGION SAFE−OPERATING AREA

1.0

7.0

5.0

5.0 ms

1.0 ms

100 ms

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

5.0

TJ = 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

2N6036

2N6035

7.0 10

20 30

50 70

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 4. 2N6035, 2N6036

100

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

5.0

5.0 ms

1.0 ms

100 ms

TJ = 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

2N6039

2N6038

7.0 10

20 30

50 70

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. 2N6038, 2N6039

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 4 and 5 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

TC = 25°C

100

0.04 0.06 0.1

Cob

Cib

PNP

NPN

0.2 0.4 0.6 1.0 2.0 4.0 6.0 10

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

PNP

2N6034, 2N6035, 2N6036

6.0 k

TC = 125°C

4.0 k

3.0 k

25°C

2.0 k

VCE = 3.0 V

NPN

2N6038, 2N6039

6.0 k

TJ = 125°C

4.0 k

3.0 k

2.0 k

25°C

VCE = 3.0 V

−55 °C

1.0 k 1.0 k

800 800

600 600

400

300

0.04 0.06

0.1 0.2 0.4 0.6 1.0 2.0 4.0

400

300

0.04 0.06

IC, COLLECTOR CURRENT (AMP)

Figure 7. DC Current Gain

0.1 0.2 0.4 0.6 1.0

IC, COLLECTOR CURRENT (AMP)

2.0

4.0

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

3.4

3.0

IC =

2.6 0.5 A

1.0 A

2.2

2.0 A

TJ = 25°C

4.0 A

3.4

3.0 IC =

0.5 A

2.6

2.2

1.0 A 2.0 A

4.0 A

TJ = 25°C

1.8 1.8

1.4 1.4

1.0

0.6

0.1 0.2

1.0

0.5 1.0 2.0 5.0 10 20 51000

0.6

0.1 0.2 0.5

IB, BASE CURRENT (mA)

Figure 8. Collector Saturation Region

1.0 2.0 5.0 10 20 50

IB, BASE CURRENT (mA)

100

2.2

TJ = 25°C

1.8

1.4 VBE(sat) @ IC/IB = 250

1.0

VCE(sat) @ IC/IB = 250

0.6

VBE @ VCE = 3.0 V

2.2

TJ = 25°C

1.8

1.4 VBE(sat) @ IC/IB = 250

1.0

VCE(sat) @ IC/IB = 250

0.6

VBE @ VCE = 3.0 V

0.2

0.04 0.06

0.1 0.2 0.4 0.6 1.0

IC, COLLECTOR CURRENT (AMP)

2.0 4.0

0.2

0.04 0.06

Figure 9. “On” Voltages

0.1 0.2 0.4 0.6 1.0

IC, COLLECTOR CURRENT (AMP)

2.0

4.0

ORDERING INFORMATION

2N6034

2N6034G

Device

2N6035

2N6035G

2N6036

2N6036G

2N6038

2N6038G

2N6039

2N6039G

Package

TO−225AA

(Pb−Free)

TO−225AA

(Pb−Free)

TO−225AA

(Pb−Free)

TO−225AA

(Pb−Free)

TO−225AA

(Pb−Free)

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Shipping

500 Units / Box