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(PNP) 2N6034, 2N6035,
2N6036; (NPN) 2N6038,
2N6039
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6034 VCEO 40 Vdc
2N6035, 2N6038
60
2N6036, 2N6039
80
Collector−Base Voltage
2N6034 VCBO 40 Vdc
2N6035, 2N6038
60
2N6036, 2N6039
80
Emitter−Base Voltage
Collector Current
VEBO 5.0 Vdc
Continuous
Peak
IC
4.0 Adc
8.0 Apk
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
IB 100 mAdc
PD 40 W
320 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+ 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
2
N603xG
Y
WW
2N603x
G
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 13
1
Publication Order Number:
2N6035/D

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
Collector−Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
Collector−Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
*Indicates JEDEC Registered Data.
2N6034, 2N6035, 2N6036
2N6038, 2N6039
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
|hfe|
Cob
Min Max Unit
Vdc
40 −
60 −
80 −
mA
100
− 100
− 100
mA
− 100
− 100
− 100
− 500
− 500
− 500
mAdc
0.5
0.5
0.5
− 2.0 mAdc
500 −
750 15,000
100 −
Vdc
2.0
3.0
− 4.0 Vdc
− 2.8 Vdc
25 −
pF
− 200
− 100
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
VCC
−30 V
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+8.0 V
0
51 D1
8.0 k 60
V1
approx
−12 V
25 ms
tr, tf 10 ns
DUTY CYCLE = 1.0%
+4.0 V
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
Figure 1. Switching Times Test Circuit
4.0
ts
VCC = 30 V IB1 = IB2
IC/IB = 250 TJ = 25°C
2.0
tf
1.0
0.8
0.6 tr
0.4
0.2
0.04 0.06
td @ VBE(off) = 0
PNP
NPN
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 2. Switching Times
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
qJC(t) = r(t) qJC
P(pk)
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10 20
t, TIME (ms)
Figure 3. Thermal Response
30
50
100 200 300 500 1000
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
ACTIVE−REGION SAFE−OPERATING AREA
1.0
7.0
5.0
5.0 ms
1.0 ms
100 ms
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
2N6036
2N6035
7.0 10
20 30
50 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. 2N6035, 2N6036
100
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
dc
1.0 ms
100 ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
2N6039
2N6038
7.0 10
20 30
50 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6038, 2N6039
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
TC = 25°C
100
70
50
30
20
10
0.04 0.06 0.1
Cob
Cib
PNP
NPN
0.2 0.4 0.6 1.0 2.0 4.0 6.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
20
40
PNP
2N6034, 2N6035, 2N6036
6.0 k
TC = 125°C
4.0 k
3.0 k
25°C
2.0 k
VCE = 3.0 V
NPN
2N6038, 2N6039
6.0 k
TJ = 125°C
4.0 k
3.0 k
2.0 k
25°C
VCE = 3.0 V
−55 °C
−55 °C
1.0 k 1.0 k
800 800
600 600
400
300
0.04 0.06
0.1 0.2 0.4 0.6 1.0 2.0 4.0
400
300
0.04 0.06
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
3.4
3.0
IC =
2.6 0.5 A
1.0 A
2.2
2.0 A
TJ = 25°C
4.0 A
3.4
3.0 IC =
0.5 A
2.6
2.2
1.0 A 2.0 A
4.0 A
TJ = 25°C
1.8 1.8
1.4 1.4
1.0
0.6
0.1 0.2
1.0
0.5 1.0 2.0 5.0 10 20 51000
0.6
0.1 0.2 0.5
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
0.2
0.04 0.06
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 4.0
0.2
0.04 0.06
Figure 9. “On” Voltages
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
ORDERING INFORMATION
2N6034
2N6034G
Device
2N6035
2N6035G
2N6036
2N6036G
2N6038
2N6038G
2N6039
2N6039G
Package
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
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5
Shipping
500 Units / Box