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Transistors
2SA2073
High voltage discharge, High speed switching,
Low Noise (60V, 3A)
2SA2073
zFeatures
1) High speed switching. ( tf : Typ. : 20ns at IC=3A)
2) Low saturation voltage, typically.
(Typ. : 200mV at IC=2.0A, IB=200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SC5826.
zApplications
High speed switching, Low noise
zDimensions (Unit : mm)
ATV
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
(1) Emitter
2.54 2.54
1.05 0.45
(2) Collector
(3) Base
Taping specifications
Abbreviated symbol : A2073
zStructure
PNP silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SA2073
Taping
TV2
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
60
60
6
3
6
1.0
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transistor frequency
fT
Collector output capacitance
Cob
Turn-on time
Storage time
Fall time
ton
tstg
tf
1 Single pulse
2 See switching characteristics measurement circuits
2SA2073
Min. Typ. Max. Unit
Condition
60 V IC= −1mA
60 V IC= −100µA
6 V IE= −100µA
1.0
µA VCB= −40V
1.0
µA VEB= −4V
200 500 mV IC= −2.0A
IB= −200mA
120 270 VCE= −2V
IC= −100mA
VCE= −10V
200 MHz IE=100mA
f=10MHz
VCB= −10V
40 pF IE=0mA
f=1MHz
20 ns IC= −3A
130
ns
IB1= −300mA
IB2=300mA
20 ns VCC ∼− 25V
1
1
2
zhFE RANK
Q
120270
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Transistors
zElectrical characteristics curves
200
IB=1000µA
900µA
160 800µA
700µA
120 600µA
500µA
80 400µA
300µA
40 200µA
100µA
0 0µA
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Typical output characteristics
10 10ms 1ms
100µs
100ms
1
DC
0.1
0.01
0.001
0.1
1
10 100
COLLECTOR EMITTER VOLTAGE : VCE (V)
Fig.2 Safe operating area
2SA2073
1000
100
Tstg
Tf
Ton
Ta=25°C
VCC=25V
10
0.01
0.1 1
IC (A)
Fig.3 Switching Time
10
1000
125°C
25°C
100
40°C
10
VCE=2V
1000
100
10
VCE=2V
VCE=5V
VCE=3V
VCE=2V
1
0.1
IC/Ib=10/1
125°C
25°C
40°C
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs.collector current ( Ι )
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain
vs.collector current ( ΙΙ )
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs.collector current ( Ι )
1
0.1
Ic/Ib=20/1
Ic/Ib=10/1
0.01
Ta=25°C
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.7 Collector-emitter saturation voltage
vs.collector current ( ΙΙ )
10
IC/Ib=10/1
1 40°C
125°C
25°C
0.1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.8 Base-emitter saturation voltage
vs. collector current
10
1
125°C
0.1
VCE=2V
25°C
40°C
0.01
0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.9 Grounded emitter propagation
characteristics
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Transistors
1000
100
Ta=25°C
VCE=10V
1000
100
Ta=25°C
f=1MHz
10 10
1
0.001
0.01 0.1
1
EMITTER CURRENT : IE (A)
10
Fig.10 Transition frequency
1
0.1 1
10 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.11 Collector output capacitance
zSwitching characteristics measurement circuits
VIN PW
IB1
PW 50µs
DUTY CYCLE 1%
IB2
RL=8.3
IC
VCC 25V
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
Ton Tstg
10%
IB2
IB1
Tf
IC
2SA2073
4/4

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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1