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STB85NF55L
STP85NF55L
N-CHANNEL 55V - 0.0060 - 80A D2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP85NF55L
STB85NF55L
55 V
55 V
<0.008
<0.008
s TYPICAL RDS(on) = 0.0060
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
ID
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STP85NF55L
STB85NF55L
STB85NF55LT4
MARKING
P85NF55L
B85NF55L
B85NF55L
PACKAGE
TO-220
D2PAK
D2PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Current Limited by Package.
(••) Pulse width limited by safe operating area.
September 2002
Value
55
55
± 15
80
80
320
300
2.0
10
980
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1) ISD 80A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
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STB85NF55L STP85NF55L
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
55
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 40 A
ID = 40 A
Min.
1
Typ.
1.6
0.0060
0.008
Max.
2.5
0.008
0.01
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15V
ID = 40 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
130
4050
860
300
Max.
Unit
S
pF
pF
pF
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STB85NF55L STP85NF55L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27.5 V
ID = 40 A
RG = 4.7
VGS = 5 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=27.5V ID=80A VGS=5V
(see test circuit, Figure 4)
Min.
Typ.
35
165
Max.
80 110
20
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 27.5 V
ID = 40 A
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 3)
Min.
Typ.
70
55
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 80 A di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
80
240
6
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
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STB85NF55L STP85NF55L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature
STB85NF55L STP85NF55L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
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