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STB85NF55L
STP85NF55L
N-channel 55 V, 0.0060 , 80 A, TO-220, D2PAK
STripFET™ II Power MOSFET
Features
Type
VDSS
STB85NF55L
STP85NF55L
55 V
55 V
Low threshold drive
RDS(on)
max
< 0.008
< 0.008
ID
80 A
80 A
Application
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "single feature size"
strip-based process. The resulting
transistorshows extremely high packing density
for low on-resistance, rugged avalanche
characteristics andless critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
$4!"OR
'
Table 1. Device summary
Order code
STB85NF55LT4
STP85NF55L
Marking
B85NF55L
P85NF55L
Package
D²PAK
TO-220
3
!-V
Packaging
Tape and reel
Tube
August 2009
Doc ID 8544 Rev 8
1/14
www.st.com
14

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Contents
Contents
STB85NF55L, STP85NF55L
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 8544 Rev 8

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STB85NF55L, STP85NF55L
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID (1)
ID(1)
IDM(2)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
TJ Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD 80 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
4. Starting TJ = 25 °C, ID = 40 A, VDD = 40 V
Value
55
± 15
80
80
320
300
2.0
10
980
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-amb Thermal resistance junction-ambient max.
Rthj-pcb Thermal resistance junction-pcb max.(1)
Tl Maximum lead temperature for soldering purpose
1. When mounted on 1inch² FR-4 2Oz Cu board
Value
D2PAK
TO-220
0.5
62.5
35
300
Unit
°C/W
°C/W
°C/W
°C
Doc ID 8544 Rev 8
3/14

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Electrical characteristics
2 Electrical characteristics
STB85NF55L, STP85NF55L
(TCASE= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±15 V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
1 1.6 2.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A
VGS= 5 V, ID= 40 A
0.0060 0.008
0.008 0.01
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15 V, ID = 40 A
VDS =25 V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 27.5 V, ID = 80 A
VGS = 5 V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
-
Typ.
130
Max.
Unit
S
4050
- 860
300
pF
pF
pF
80 110 nC
- 20
nC
45 nC
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 27.5 V, ID= 40 A,
RG=4.7 Ω, VGS= 5 V
Figure 14 on page 8
Min. Typ. Max. Unit
35
165
--
70
55
ns
ns
ns
ns
4/14 Doc ID 8544 Rev 8

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STB85NF55L, STP85NF55L
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 20 V, TJ = 150 °C
Figure 16 on page 8
-
-
-
-
80 A
320 A
1.5 V
80 ns
240 nC
6A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 8544 Rev 8
5/14