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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by J308/D
JFET VHF/UHF Amplifiers
N–Channel — Depletion
3
GATE
1 DRAIN
J308
J309
J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
IGF
PD
25 Vdc
25 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ – 65 to +125
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C
°C
Symbol
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0, TA = 25°C)
(VGS = –15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
IGSS
VGS(off)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
IDSS
Gate–Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
VGS(f)
SMALL– SIGNAL CHARACTERISTICS
Common–Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J308
J309
J310
Re(yis)
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yos)
Common–Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
v v1. Pulse Test: Pulse Width 300 µs, Duty Cycle 3.0%.
Gpg
Min
– 25
– 1.0
– 1.0
– 2.0
12
12
24
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— –1.0 nAdc
— –1.0 µAdc
Vdc
— – 6.5
— – 4.0
— – 6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
mmhos
0.7 —
0.7 —
0.5 —
0.25 — mmhos
16 — dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

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J308 J309 J310
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
SMALL– SIGNAL CHARACTERISTICS (continued)
Common–Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yfs)
Common–Gate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yig)
Common–Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J308
J309
J310
gfs
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
gos
Common–Gate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J308
J309
J310
gfg
Common–Gate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J308
J309
J310
gog
Gate–Drain Capacitance
(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
Cgd
Gate–Source Capacitance
(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
Cgs
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz)
NF
Equivalent Short–Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
Min
8000
10000
8000
Typ
12
12
13000
13000
12000
150
100
150
1.8
4.3
1.5
10
Max Unit
— mmhos
— mmhos
20000
20000
18000
250
µmhos
µmhos
µmhos
µmhos
2.5 pF
5.0 pF
— dB
nVń ǸHz
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

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50
SOURCE
U310
C3
L1 C1
C5
L2P
C2
C6
50
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4I.D. (Air Core).
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
J308 J309 J310
70 70
60
VDS = 10 V
50
IDSS
40 + 25°C
TA = – 55°C
+ 25°C
60
50
40
30 +150°C 30
20
+ 25°C
20
– 55°C
10 +150°C 10
–5.0 –4.0 –3.0 –2.0 –1.0
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
0
0
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
35
30 VDS = 10 V
f = 1.0 MHz
25
TA = – 55°C
+ 25°C
20
15
10
5.0
0
5.0
+150°C
– 55°C
+ 25°C
+150°C
4.0 3.0 2.0 1.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
0
Figure 3. Forward Transconductance
versus Gate–Source Voltage
100 k
10 k
1.0 k
Yfs Yfs
100
1.0 k
VGS(off) = – 2.3 V =
10
Yos VGS(off) = – 5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
10 120
RDS
96
7.0
72
Cgs
4.0 48
Cgd
1.0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
24
0
0
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3