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UNISONIC TECHNOLOGIES CO., LTD
2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
FEATURES
* Collector-Emitter voltage:
BVCEO=50V
* Collector current up to 150mA
* High hFE linearity
* Complimentary to UTC 2SA1015
1
TO-92
ORDERING INFORMATION
Normal
Order Number
Lead Free Plating
Package
www.DataSheet4U.com
2SC1815-x-T92-A-B
2SC1815L-x-T92-A-B
TO-92
2SC1815-x-T92-A-K
2SC1815L-x-T92-A-K
TO-92
*Pb-free plating product number: 2SC1815L
Pin Assignment
1 23
E CB
E CB
Packing
Tape Box
Bulk
2SC1815L-x-T92-A-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) B: Tape Box, K: Bulk
(2) refer to Pin Assignment
(3) T92: TO-92
(4) x: refer to Classification of hFE1
(5) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 150 mA
Base current
IB 50 mA
Collector dissipation(Ta=25℃)
PC 400 mW
Junction Temperature
TJ +125
Storage Temperature
TSTG
-55 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain(note)
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
TEST CONDITIONS
ICBO VCB=60V, IE=0
IEBO VEB=5V, IC=0
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=100mA, IB=10mA
hFE1 VCE=6V, IC=2mA
hFE2 VCE=6V, IC=150mA
fT VCE=10V, IC=50mA
Cob VCB=10V, IE=0, f=1MHz
NF
IC=-0.1mA, VCE=6V
RG=10k, f=100Hz
MIN TYP MAX UNIT
100 nA
100 nA
0.1 0.25
V
1.0 V
120 700
25
80 MHz
2.0 3.0 pF
1.0 1.0 dB
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC1815
TYPICAL CHARACTERISTICS
Fig.1 Static characteristics
100
80
IB=300µA
60
IB=250µA
40 IB=200µA
IB=150µA
20 IB=100µA
00 4
8
IB=50µA
12 16 20
Collector-Emitter Voltage (V)
Fig.3 Base-Emitter on Voltage
102
VCE=6V
101
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 DC current Gain
103
VCE=6V
102
101
100
10-1
100 101
102 103
Collector Current, IC (mA)
Fig.4 Saturation Voltage
104
IC=10*IB
103
VBE(SAT )
100
10-1
0
0.2 0.4 0.6 0.8 1.0
Base-Emitter Voltage (V)
Fig.5 Current Gain-Bandwidth
Product
103
102 VCE=6V
102
VCE(SAT)
10110-1 100 101
102 103
Collector Current, IC (mA)
Fig.6 Collector Output Capacitance
102
f=1MHz
101 IE=0
101
100
10-1
100 101
Collector Current, IC (mA)
102
100
10-1
100
101 102
Collector-Base Voltage (V)
103
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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