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UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC3320L-x-T3P-T
2SC3320L-x-T3P-T
TO-3P
2SC3320L-x-T3N-T
2SC3320L-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
BCE
Packing
Tube
Tube
MARKING INFORMATION
PACKAGE
TO-3P
TO-3PN
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
VCBO
VCEO
VCEO(SUS)
VEBO
500
400
400
7
V
V
V
V
Collector Current
Base Current
IC 15 A
IB 5 A
Power Dissipation
Junction Temperature
PD 80 W
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
1.55
ELECTRICAL SPECIFICATIONS (TC =25°C, Unless Otherwise Specified.)
UNIT
°C/W
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
VCE (SAT)
VBE (SAT)
ICBO
IEBO
hFE
tON
tSTG
tF
TEST CONDITIONS
ICBO=1mA
ICEO=10mA
IC=0.2A
IEBO=1mA
IC=6A, IB=1.2A
VCBO=500V
VEBO=7V
IC=6A, VCE=5V
IC=7.5A, IB1 =1.5A, IB2=-3A
RL=20, PW=20μs, Duty 2%
MIN TYP MAX UNIT
500 V
400 V
400 V
7V
1V
1.5 V
1 mA
1 mA
10 45
0.5 μs
1.5 μs
0.15 μs
CLASSIFICATION OF hFE
RANK
RANGE
A
10~15
B
15~20
C
20~25
D
25~30
E
30~35
F
35~45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC3320
SWITCHING TIME TEST CIRCUIT
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC3320
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
4
3
1
0.5
0.3
0.1
0.05
0.03
Base and Collector Saturation Voltage
VBE(SAT)
TC=25IC=5IB
VCE(SAT)
0.01
0.05 0.1
0.3 0.5 1
3 5 10 20
Collector Current, IC (A)
Safe Operating Area
30 10
s
10
5
3 PW=1ms
1 DC
0.5
0.3
0.1 TC=25
0.05 Single Pulse
0.03
1 3 5 10
30 50 100 300 5001000
Collector Emitter voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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