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Transistors
3A / 12V Bipolar transistor
2SD2678
2SD2678
zApplications
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(VCE(sat) 250mV at IC = 1.5A, IB = 30mA)
zStructure
NPN epitaxial planar silicon transistor
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6 1.5
(1)Base
(2)Collector
(3)Emitter
(1) (2)
(3)
0.4 0.5 0.4
1.5 1.5
3.0
0.4
Abbreviated symbol : XX
zAbsolute maximum ratings (Ta=25°C)
zPackaging specifications
Parameter
Symbol Limits
Unit
Package
MPT3
Collector-base voltage
VCBO
15
V
Packaging type
Taping
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
VCEO
VEBO
IC
ICP
12 V
www.DataSheet4U.com
6V
3
6 1
A
Part No.
2SD2678
Code
T100
Basic ordering unit (pieces) 1000
Power dissipation
0.5 2
PC W
2 3
Junction temperature
Tj 150 °C
Storage temperature
Tstg
1 Pw=1ms, Pulsed.
2 Each terminal mounted on a recommended land.
3 Mounted on a 40×40×0.7mm ceramic board.
55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
12 − −
IC=1mA
15 − − V IC=10µA
6−−
IE=10µA
− − 100 nA VCB=15V
− − 100
VEB=6V
120 250 mV IC/IB=1.5A/30mA
270 680 VCE=2V, IC=500mA
360 MHz VCE=2V, IE= 500mA , f=100MHz
20 pF VCB=10V , IE=0mA , f=1MHz
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Transistors
zElectrical characteristics curves
1000
VCE=2V
Ta=100 C
Pulsed
Ta=25 C
Ta=40 C
100
2SD2678
10
IC/IB=20/1
VCE=2V
Pulsed
1
Ta=100 C
0.1
Ta=25 C
Ta=45 C
10
IC/IB=50/1
1
IC/IB=20/1
Ta=25 C
Pulsed
IC/IB=10/1
10
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
0.01
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.1 DC current gain
vs. collector current
Fig.2 Collector-emitter saturation voltage
vs. collector current
0.1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.3 Base-emitter saturation voltage
vs.collector current
10
IC/IB=20/1
Pulsed
Ta=100 C
Ta=25 C
1
Ta=45 C
0.1
1000
100
0.01
Ta=25 C
VCE=2V
f= 100MHz
1000
100
IC=0A
f=1MHz
Ta=25 C
Cib
Cob
0.001
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
10
0.01
0.1 1
EMITTER CURRENT : IE (A)
10
Fig.5 Gain bandwidth product
vs. emitter current
10
0.001
0.01
0.1
1
10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
2/2

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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1