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2SA2151A
Audio Amplification Transistor
Features and Benefits
Small package (TO-3P)
High power handling capacity, 160 W
Improved sound output by reduced on-chip impedance
For professional audio (PA) applications, VCEO = –230 V
versions available
Complementary to 2SC6011A
Recommended output driver: 2SA1668A
Package: 3 Lead TO-3P
Description
By adapting the Sanken unique wafer-thinner technique, these
PNPpower transistors achieve power-up by decreasing thermal
resistance, and provide higher voltage avalanche breakdown
rating.The high power-handling capacity of the TO-3Ppackage
allows a smaller footprint on the circuit board design. This
series of transistors is very well suited to not only multichannel
applications for AV (audio-visual) amplifiers and receivers,
but also parallel connection applications for PA (professional
audio system) amplifiers.
Applications include the following:
Single transistors for audio amplifiers
Home audio amplifiers
Professional audio amplifiers
Automobile audio amplifiers
Audio market
Single transistors for general purpose
www.DataSheet4U.com
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2SA2151A
Audio Amplification Transistor
SELECTION GUIDE
Part Number
Type
hFE Rating
Range O: 50 to 100
Packing
2SA2151A*
PNP
Range P: 70 tp 140
Bulk, 100 pieces
Range Y: 90 to 180
*Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
PC
Junction Temperature
TJ
Storage Temperature
Tstg
Rating
–230
–230
–6
–15
–4
160
150
–55 to150
Unit
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic
Symbol
Test Conditions
Collector-Cutoff Current
ICBO
VCB = –230 V
Emitter Cutoff Current
IEBO
VEB = –6 V
Collector-Emitter Voltage
V(BR)CEO IC = –50 mA
DC Current Transfer Ratio*
hFE VCE = –4 V, IC = –3 A
Collector-Emitter Saturation Voltage
VCE(sat) IC = –5 A, IB = –0.5 A
Cutoff Frequency
fT VCE = –12 V, IE = 0.5 A
Output Capacitance
COB VCB = –10 V, IE = 0 A, f = 1 MHz
*hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).
Min.
–230
50
Typ.
20
450
Max.
–10
–10
180
–0.5
Unit
μA
μA
V
V
MHz
pF
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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2SA2151A
Audio Amplification Transistor
IC vs. VCE
Performance Characteristics
15
1 A 700 mA 500 mA
300 mA
200 mA
10
100 mA
3
VCE(sat) vs. IB
2
5 50 mA
–IB= 20 mA
0
01234
–VCE (V)
15
1
0
0
1000
–IC= 10 A
–IC= 5 A
0.5 1.0
–IB (A)
1.5
2.0
IC vs. VBE
–VCE = 4 V Continuous
10
5
100
hFE vs. IC
–VCE = 4 V Continuous
10
Typ.
00
1000
100
hFE vs. IC
–VCE = 4 V Continuous
10
0.5 1.0 1.5
–VBE (V)
125°C
25°C
–30°C
2.0
RθJA vs. t
1
0.01
10.00
0.1 1
10
–IC (A)
1.00
0.10
100
1
0.01
0.1 1
10
–IC (A)
100
0.01
1
10 100
t (ms)
1000
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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2SA2151A
Audio Amplification Transistor
Performance Characteristics, continued
Safe Operating Area
TA= 25°C, single pulse, no heatsink, natural cooling
100.0
10.0
DC
1.0
0.1
30
20
fT vs. IE
–VCE = 12 V Continuous 10
0
0.01
0.01
1
Typ.
0.1 1
10 100
IE (A)
10 100
–VCE (V)
1000
200
PC vs. TA
150
100
With Infinite Heatsink
50
3.5 Without Heatsink
0
0 25 50 75
100 125 150
TA (°C)
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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2SA2151A
Audio Amplification Transistor
PACKAGE OUTLINE DRAWING, TO-3P
15.6 ±0.3
14.0 ±0.3
13.6 ±0.2
9.6 ±0.3
5.0 MAX
2.1 MAX
Branding
XXXXXXXX
XXXXXXXX
3
+0.2
–0.1
2
+0.2
–0.1
(2×)
1.0
+0.2
–0.1
(3×)
2×P5.45 ±0.1
Terminal dimension at lead tips
1.7
+0.2
–0.3
0.6
+0.2
–0.1
15.8 ±0.2
12
Terminal core material: Cu
Terminal treatment: Ni plating and solder dip
Heat sink core material: Cu
Heat sink treatment: Ni plating
Leadform number: 100
3
Dimensions in millimeters
Pin Assignments:
1. Base
2. Collector
3. Emitter
Branding codes (exact appearance at manufacturer discretion):
1st line, type: A2151A
2nd line, lot: YM H
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
H is the hFE rating (O, P, or Y; for values see
footnote, Electrical Characteristics table)
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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