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2SK2845
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
2SK2845
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z Low drain-source ON-resistance
: RDS (ON) = 8.0 (typ.)
z High forward transfer admittance
: |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
1
3
40
324
1
4.0
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
3.125
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
6.8 MAX.
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.95 MAX.
0.6 ± 0.15
2.3 2.3
0.6 MAX.
123
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
6.8 MAX.
5.2 ± 0.2
0.6 MAX.
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
2.3 2.3
123
2.3 2.3
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
0.6 MAX.
2
1
3
JEDEC
JEITA
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
2009-07-13

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Electrical Characteristics (Ta = 25°C)
2SK2845
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.5 A
VDS = 20 V, ID = 0.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
Min Typ. Max Unit
— — ±10
±30 —
— — 100
900 —
2.0 — 4.0
— 8.0 9.0
0.45 0.9
— 350 —
—8—
— 40 —
μA
V
μA
V
V
S
pF
— 20 —
Switching time
Turn-on time
Fall time
ton
tf
— 70 —
ns
— 30 —
Turn-off time
Total gate charge (gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 1 A
Qgd
— 95 —
— 15 —
— 6 — nC
—9—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 VdIDR / dt = 100 A / μs
Min Typ. Max Unit
—— 1 A
—— 3 A
— — 1.9 V
— 750 —
ns
— 3 — μC
Marking
K2845
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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2SK2845
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2SK2845
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2SK2845
RG = 25 Ω
VDD = 90 V, L = 594 mH
EAS
=
1
2
L I2
⋅ ⎜⎛
BVDSS
BVDSS VDD
⎟⎞
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