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LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
B170 thru B1100
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
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SMA
SMA
A DIM. MIN. MAX.
A 4.06 4.57
B C B 2.29 2.92
C 1.27 1.63
D 0.15 0.31
E 4.83 5.59
G
H FD
E
F 0.05 0.20
G 2.01 2.62
H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
B170
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TL =100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
VRRM
VRMS
VDC
I(AV)
IFSM
70
49
70
Maximum forward
Voltage at 1.0A DC
@TJ =25 C
@TJ =100 C
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
Typical Junction
Capacitance (Note 1)
CJ
Typical Thermal Resistance (Note 2)
R0JL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
B180
80
56
80
B190
90
63
90
1.0
B1100
100
70
100
UNIT
V
V
V
A
30
0.79
0.69
0.5
5.0
30
25
-55 to +125
-55 to +150
A
V
mA
pF
C/W
C
C
REV. 2, 01-Dec-2000, KSHA02

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RATING AND CHARACTERISTIC CURVES
B170 thru B1100
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
0
20
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
40 60 80 90
100 120
140
LEAD TEMPERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
30
20
10
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
12
5 10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
1000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
1.0
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0.1
100
.01
0
TJ = 25 C
PULSEWIDTH:300us
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
1.8
TJ = 25 C F= 1MHz
10
0.1 1.0
4.0 10.0
REVERSE VOLTAGE , (VOLTS)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 125 C
1.0
TJ = 100 C
0.1
0.01 TJ = 25 C
0.001
0 20 40 60 80 90 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
100
REV. 2, 01-Dec-2000, KSHA02