H11AA3-M.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 H11AA3-M 데이타시트 다운로드

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April 2006
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M
AC Input/Phototransistor Optocouplers
Features
Bi-polar emitter input
Built-in reverse polarity input protection
Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
VDE approved File #102497 (ordering option ‘V’)
Applications
AC line monitor
Unknown polarity DC sensor
Telephone line interface
Description
The H11AAX-M series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
Package and Schematic
1 6 BASE
2 5 COLL
3 4 EMITTER
©2006 Fairchild Semiconductor Corporation
H11AAX-M Rev. 1.0.0
1
www.fairchildsemi.com

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Absolute Maximum Ratings (TA =25°C Unless otherwise specified)
Symbol
Parameter
Device
Value
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
IF
IF(pk)
PD
Continuous Forward Current
Forward Current – Peak (1µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
IC Continuous Collector Current
PD Detector Power Dissipation
Derate linearity from 25°C
All -40 to +150
All -40 to +100
All 260 for 10 sec
250
All
2.94
All 60
All ±1.0
120
All
1.41
All 50
150
All
1.76
Units
°C
°C
°C
mW
mW/°C
mA
A
mW
mW/°C
mA
mW
mW/°C
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
EMITTER
VF Input Forward Voltage
CJ Capacitance
DETECTOR
BVCEO
Breakdown Voltage
Collector to Emitter
BVCBO
BVEBO
BVECO
ICEO
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
CCE Capacitance Collector
to Emitter
CCB Collector to Base
CEB Emitter to Base
IF = ±10mA
VF = 0 V, f = 1.0MHz
All
All
IC = 1.0mA, IF = 0
IC = 100µA, IF = 0
IE = 100µA, IF = 0
IE = 100µA, IF = 0
VCE = 10 V, IF = 0
VCE = 0, f = 1MHz
All
All
All
All
H11AA1,3,4(-M)
H11AA2-M
All
VCB = 0, f = 1MHz
VEB = 0, f = 1MHz
All
All
30
70
5
7
*Typical values at TA = 25°C
Typ.*
1.17
80
100
120
10
10
1
1
10
80
15
Max. Unit
1.5 V
pF
V
V
V
V
50 nA
200
pF
pF
pF
H11AAX-M Rev. 1.0.0
2
www.fairchildsemi.com

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Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol Characteristics
Test Conditions
Device
CTRCE Current Transfer Ratio,
Collector to Emitter
VCE(SAT)
Current Transfer Ratio,
Symmetry
Saturation Voltage,
Collector to Emitter
IF = ±10mA, VCE = 10V H11AA4-M
H11AA3-M
H11AA1-M
H11AA2-M
IF = ±10mA, VCE = 10V
(Figure 11)
All
IF = ±10mA, ICE = 0.5mA
All
Min.
100
50
20
10
.33
Typ.*
Max. Units
%
3.0
.40 V
Isolation Characteristics
Symbol
Characteristic
CI-O
VISO
RISO
Package Capacitance
Input/Output
Isolation Voltage
Isolation Resistance
*Typical values at TA = 25°C
Test Conditions
VI-O = 0, f = 1MHz
f = 60 Hz, t = 1 sec.
VI-O = 500 VDC
Min.
7500
1011
Typ.*
0.7
Max.
Units
pF
Vac(pk)
H11AAX-M Rev. 1.0.0
3
www.fairchildsemi.com