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FQA8N80C
800V N-Channel MOSFET
Features
• 8.4A, 800V, RDS(on) = 1.55@VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N80C
800
8.4
5.3
33.6
± 30
850
8.4
22
4.0
220
1.75
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.57
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA8N80C Rev. A1
1
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Package Marking and Ordering Information
Device Marking
FQA8N80C
FQA8N80C
Device
FQA8N80C
FQA8N80C_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.2 A
VDS = 50 V, ID = 4.2 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 8.0A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 640 V, ID = 8.0A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS =8.4 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8.4 A,
dIF / dt = 100 A/µs
(Note 4)
800
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22.6mH, IAS =8.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
1.02
--
--
--
--
--
1.29
5.7
1580
135
13
40
110
65
70
35
10
14
--
--
--
690
8.2
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.55
-- S
2050
175
17
pF
pF
pF
90 ns
230 ns
140 ns
150 ns
45 nC
-- nC
-- nC
8.4 A
33.6 A
1.4 V
-- ns
-- µC
2 www.fairchildsemi.com
FQA8N80C Rev. A1

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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
101 7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
100
Notes :
1. 250µs Pulse Test
10-1 2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
2V5DS0µ=s50PVulse
Test
468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
3.0
2.5
VGS = 10V
2.0 VGS = 20V
1.5
Note : TJ = 25
1.0
0 4 8 12 16 20
ID, Drain Current [A]
101
100
10-1
0.2
150 25
Notes :
1.
2.
2V5G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 5. Capacitance Characteristics
2500
2000
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Ciss
1500
1000
500
Coss
Notes :
1.
2.
fV=GS1=M0HVz
Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 8A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
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FQA8N80C Rev. A1

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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9 Notes:
1.
2.
IVDG=S =2500Vµ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
Figure 9. Maximum Safe Operating Area
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
VIDG=S =4.100AV
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
102
Operation in This Area
is Limited by RDS(on)
10 µs
101 100 µs
1 ms
10 ms
DC
100
10-1
10-2
100
Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e5P0uolCse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 11. Transient Thermal Response Curve
100
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [ ]
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
sing le p ulse
N otes :
1.
2.
3.
ZD θu JtCy(
T JM -
t) = 0.57 /W M
Fa
TC
ct
=
or,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
4 www.fairchildsemi.com
FQA8N80C Rev. A1

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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
FQA8N80C Rev. A1