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®
Data Sheet
Advanced Synchronous Rectified Buck
MOSFET Drivers with Pre-POR OVP
The ISL6612B and ISL6613B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612B drives the upper gate to above rising VCC
POR (7V), while the lower gate can be independently driven
over a range from 5V to 12V. The ISL6613B drives both
upper and lower gates over a range of 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses. These drivers are optimized for POL
DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
ISL6612B, ISL6613B
July 27, 2006
FN9205.3
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Low VCC Rising Threshold (7V) for IBA Applications.
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.

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ISL6612B, ISL6613B
Ordering Information
PART NUMBER
ISL6612BCB
ISL6612BCB-T
ISL6612BCBZ (Note)
ISL6612BCBZ-T (Note)
ISL6612BCR
ISL6612BCR-T
ISL6612BCRZ (Note)
ISL6612BCRZ-T (Note)
ISL6612BECB
ISL6612BECB-T
ISL6612BECBZ (Note)
ISL6612BECBZ-T (Note)
ISL6612BEIB
ISL6612BEIB-T
ISL6612BEIBZ (Note)
ISL6612BEIBZ-T (Note)
ISL6612BIB
ISL6612BIB-T
ISL6612BIBZ (Note)
ISL6612BIBZ-T (Note)
ISL6612BIR
ISL6612BIR-T
ISL6612BIRZ (Note)
ISL6612BIRZ-T (Note)
ISL6613BCB
ISL6613BCB-T
ISL6613BCBZ (Note)
ISL6613BCBZ-T (Note)
ISL6613BCR
ISL6613BCR-T
ISL6613BCRZ (Note)
ISL6613BCRZ-T (Note)
ISL6613BECB
ISL6613BECB-T
ISL6613BECBZ (Note)
ISL6613BECBZ-T (Note)
ISL6613BEIB
ISL6613BEIB-T
ISL6613BEIBZ (Note)
ISL6613BEIBZ-T (Note)
PART MARKING
6612BCB
6612BCB
6612BCBZ
6612BCBZ
12BC
12BC
12BZ
12BZ
6612BECB
6612BECB
6612BECBZ
6612BECBZ
6612BEIB
6612BEIB
6612BEIBZ
6612BEIBZ
6612BIB
6612BIB
6612BIBZ
6612BIBZ
12BI
12BI
2BIZ
2BIZ
6613BCB
6613BCB
6613BCBZ
6613BCBZ
13BC
13BC
13BZ
13BZ
6613BECB
6613BECB
6613BECBZ
6613BECBZ
6613BEIB
6613BEIB
6613BEIBZ
6613BEIBZ
TEMP.
RANGE (°C)
PACKAGE
0 to 85
8 Ld SOIC
8 Ld SOIC Tape and Reel
0 to 85
8 Ld SOIC (Pb-free)
8 Ld SOIC Tape and Reel (Pb-free)
0 to 85
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
0 to 85
10 Ld 3x3 DFN (Pb-free)
10 Ld 3x3 DFN Tape and Reel (Pb-free)
0 to 85
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
0 to 85
8 Ld EPSOIC (Pb-free)
8 Ld EPSOIC Tape and Reel (Pb-free)
-40°C to 85°C
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
-40°C to 85°C
8 Ld EPSOIC (Pb-free)
8 Ld EPSOIC Tape and Reel (Pb-free)
-40°C to 85°C
8 Ld SOIC
8 Ld SOIC Tape and Reel
-40°C to 85°C
8 Ld SOIC (Pb-free)
8 Ld SOIC Tape and Reel (Pb-free)
-40°C to 85°C
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
-40°C to 85°C
10 Ld 3x3 DFN (Pb-free)
10 Ld 3x3 DFN Tape and Reel (Pb-free)
0 to 85
8 Ld SOIC
8 Ld SOIC Tape and Reel
0 to 85
8 Ld SOIC (Pb-free)
8 Ld SOIC Tape and Reel (Pb-free)
0 to 85
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
0 to 85
10 Ld 3x3 DFN (Pb-free)
10 Ld 3x3 DFN Tape and Reel (Pb-free)
0 to 85
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
0 to 85
8 Ld EPSOIC (Pb-free)
8 Ld EPSOIC Tape and Reel (Pb-free)
-40°C to 85°C
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
-40°C to 85°C
8 Ld EPSOIC (Pb-free)
8 Ld EPSOIC Tape and Reel (Pb-free)
PKG.
DWG. #
M8.15
M8.15
L10.3x3
L10.3x3
M8.15B
M8.15B
M8.15B
M8.15B
M8.15
M8.15
L10.3x3
L10.3x3
M8.15
M8.15
L10.3x3
L10.3x3
M8.15B
M8.15B
M8.15B
M8.15B
2 FN9205.3
July 27, 2006

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ISL6612B, ISL6613B
Ordering Information (Continued)
PART NUMBER
PART MARKING
TEMP.
RANGE (°C)
PACKAGE
PKG.
DWG. #
ISL6613BIB
6613BIB
-40°C to 85°C
8 Ld SOIC
M8.15
ISL6613BIB-T
6613BIB
8 Ld SOIC Tape and Reel
ISL6613BIBZ (Note)
6613BIBZ
-40°C to 85°C
8 Ld SOIC (Pb-free)
M8.15
ISL6613BIBZ-T (Note)
6613BIBZ
8 Ld SOIC Tape and Reel (Pb-free)
ISL6613BIR
13BI
-40°C to 85°C
10 Ld 3x3 DFN
L10.3x3
ISL6613BIR-T
13BI
10 Ld 3x3 DFN Tape and Reel
ISL6613BIRZ (Note)
3BIZ
-40°C to 85°C
10 Ld 3x3 DFN (Pb-free)
L10.3x3
ISL6613BIRZ-T (Note)
3BIZ
10 Ld 3x3 DFN Tape and Reel (Pb-free)
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Contact the factory for availability.
Pinouts
ISL6612BCB, ISL6613BCB (SOIC)
ISL6612BECB, ISL6613BECB (EPSOIC)
TOP VIEW
ISL6612BCR, ISL6613BCR (10L 3x3 DFN)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
GND
8 PHASE
7 PVCC
6 VCC
5 LGATE
Block Diagram
ISL6612B AND ISL6613B
UGATE 1
BOOT 2
N/C 3
PWM 4
GND 5
GND
10 PHASE
9 PVCC
8 N/C
7 VCC
6 LGATE
VCC
PWM
UVCC
+5V
10K
8K
PRE-POR OVP
FEATURES
POR/
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
(LVCC)
BOOT
UGATE
PHASE
PVCC
UVCC = VCC FOR ISL6612B
UVCC = PVCC FOR ISL6613B
LGATE
PAD
GND
FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF
THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
3 FN9205.3
July 27, 2006

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ISL6612B, ISL6613B
Typical Application - 3 Channel Converter Using ISL65xx and ISL6612B Gate Drivers
+5V TO 12V
+7V to +12V
+5V
VFB VCC
COMP
VSEN
PGOOD
PWM1
PWM2
PWM3
MAIN
CONTROL
ISL65xx
VID
ISEN1
ISEN2
FS
ISEN3
GND
VCC
BOOT
PVCC
UGATE
PHASE
PWM ISL6612B
LGATE
GND
+5V TO 12V
+7V to +12V
VCC
BOOT
PVCC
UGATE
PWM ISL6612B PHASE
LGATE
GND
+5V TO 12V
VCC
BOOT
PVCC
UGATE
ISL6612B PHASE
PWM
LGATE
GND
+7V to +12V
+VCORE
4 FN9205.3
July 27, 2006

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ISL6612B, ISL6613B
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V
VPHASE - 3.5V (<100ns Pulse Width, 2µJ) to VBOOT + 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3VDC to VPVCC + 0.3V
GND - 5V (<100ns Pulse Width, 2µJ) to VPVCC + 0.3V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3VDC to 15VDC
GND - 8V (<400ns, 20µJ) to 30V (<200ns, VBOOT-GND<36V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . Class I JEDEC STD
Thermal Information
Thermal Resistance
θJA (°C/W) θJC (°C/W)
SOIC Package (Note 1) . . . . . . . . . . . . 100
N/A
EPSOIC Package (Notes 2, 3). . . . . . .
50
7
DFN Package (Notes 2, 3) . . . . . . . . . .
48
7
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V to 13.2V
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.
2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.
PARAMETER
VCC SUPPLY CURRENT
Bias Supply Current
Gate Drive Bias Current
POWER-ON RESET AND ENABLE
VCC Rising Threshold
VCC Rising Threshold
VCC Falling Threshold
VCC Falling Threshold
PWM INPUT (See Timing Diagram on Page 7)
Input Current
PWM Rising Threshold
PWM Falling Threshold
Typical Three-State Shutdown Window
Three-State Lower Gate Falling Threshold
Three-State Lower Gate Rising Threshold
SYMBOL
IVCC
IVCC
IPVCC
IPVCC
IPWM
TEST CONDITIONS
ISL6612B, fPWM = 300kHz, VVCC =12V
ISL6613B, fPWM = 300kHz, VVCC =12V
ISL6612B, fPWM = 1MHz, VVCC = 12V
ISL6613B, fPWM = 1MHz, VVCC = 12V
ISL6612B, fPWM=300kHz, VPVCC=12V
ISL6613B, fPWM=300kHz, VPVCC=12V
ISL6612B, fPWM = 1MHz, VPVCC = 12V
ISL6613B, fPWM = 1MHz, VPVCC = 12V
0°C to 85°C
-40°C to 85°C
0°C to 85°C
-40°C to 85°C
VPWM = 5V
VPWM = 0V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
MIN
-
-
-
-
-
-
-
-
6.75
5.75
5.20
4.20
-
-
-
-
1.80
TYP
8
4.5
10.5
5
4
7.5
5
8.5
6.92
5.44
500
-450
3.00
2.00
1.50
1.00
MAX UNITS
- mA
- mA
- mA
- mA
- mA
- mA
- mA
- mA
7.10 V
7.10 V
5.60 V
5.60 V
- µA
- µA
-V
-V
2.40 V
V
V
5 FN9205.3
July 27, 2006