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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 – FEB 94
FEATURES
* 300 Volt VCEO
* 0.5 Amps continuous current
* Ptot= 1 Watt
FXT657
APPLICATIONS
* Telephone dialler circuits
* Video output drivers
REFER TO ZTX657 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb =25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
B
C
E
E-Line
TO92 Compatible
VALUE
300
300
5
1
0.5
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300
V
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
Collector Cut-Off
Current
ICBO
100 nA
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
0.5 V
Base-Emitter
Saturation Voltage
VBE(sat)
1V
Base-Emitter
Turn-On Voltage
VBE(on)
1V
Static Forward Current hFE
Transfer Ratio
40
50
Transition
Frequency
fT 30
MHz
Output Capacitance
Cobo
20 pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
CONDITIONS.
IC=100µA, IE=0
IC=10mA, , IB=0*
IE=100µA, IC=0
VCB=200V, IE=0
VEB=3V, IC=0
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
IC=100mA, VCE=5V*
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
3-50