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MOTOROLA
SEMICONDUCTOR
TECHFNreICeAsLcDaAlTeASemiconductor,
Inc.
Order this document
by MRF5S19090L/D
MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and
MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package.
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S19090LR3
MRF5S19090LSR3
www.DataSheet4U.com
Designed for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
TIISDyQ-p9i=c5a8lC52D0-MCmAaAr,(rPife1irlo=Nt,1-SC9y5Dn8Mc.7,A5PPaMgeHirnfzog,r,mf2Tar=anfc1fiec96fCo1or.2dV5eDsMD8H=Tz2h8roVuoglths,13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 25.8%
ACPR — - 51 dB
IM3 — - 37 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz,
90 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Qualified Up to a Maximum of 32 VDD Operation
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 18 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF5S19090LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19090LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 18 W CW
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
261
1.49
- 65 to +200
200
Value (1,2)
0.67
0.75
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
FFoor rMMGoorGoeroetIontI:onfow:forwwmrmwwaawt.fitr.oifeonreenOseOcsnancTlaeThl.ehics.iocsPmoPrmorodduucct,t,
1

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ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 µAdc
IDSS
1 µAdc
IGSS
1 µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2.5
2.7
3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
3.7
— Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.26
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 5 — S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.7 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR
measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps 13.5 14.5
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
24 25.8 —
%
Third Order Intermodulation Distortion
IM3 — - 37 - 35 dBc
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth at f1 - 2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth at f1 - 885 kHz and f2 +885 kHz)
ACPR
- 51 - 48 dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL — - 14.5 - 9 dB
(1) Part is internally matched both on input and output.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
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VGG
R1
+
R2 C3
Freescale Semiconductor, Inc.
B1
W1
C4 C5
R3
++
C8 C13
C11
C7 R4
+ + VDD
C12 C9 C10
RF
INPUT
Z1 Z2
C15
C6
Z3 Z4 Z5
C1
C14
Z6
Z7
DUT
Z9
Z8 Z10 Z11 Z12
C2
Z13
RF
OUTPUT
Z1 0.140x 0.080Microstrip
Z2 0.450x 0.080Microstrip
Z3 0.140x 0.080Microstrip
Z4 0.525x 0.080Microstrip
Z5 0.636x 0.141Microstrip
Z6 0.340x 0.050Microstrip
Z7 0.320x 1.401Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091x 1.133Microstrip
0.542x 0.071Microstrip
0.450x 1.133Microstrip
0.640x 0.141Microstrip
0.316x 0.080Microstrip
1.209x 0.080Microstrip
Arlon GX - 0300 - 55 - 22, 30 mil, εr = 2.55
Figure 1. MRF5S19090 Test Circuit Schematic
B1
C1
C2
C3, C13
C4, C12
C5, C11
C6, C7
C8
C9, C10
C14
C15
R1
R2
R3, R4
W1
Part
Table 1. MRF5S19090 Test Circuit Component Designations and Values
Description
Short RF Bead
22 pF Chip Capacitor, B Case
10 pF Chip Capacitor, B Case
1 µF, 50 V SMT Tantalum Capacitors
0.1 µF Chip Capacitors, B Case
1k pF Chip Capacitors, B Case
4.3 pF Chip Capacitors, B Case
10 µF, 35 V SMT Tantalum Capacitor
22 µF, 35 V SMT Tantalum Capacitors
2.7 pF Chip Capacitor, B Case
0.6 – 4.5 Gigatrim Variable Capacitor
1 kW Chip Resistor
560 kW Chip Resistor
12 W Chip Resistors
1 turn 14 gauge wire
Value, P/N or DWG
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
100B2.7BP 500X
44F3358
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Newark
Newark
Newark
Garrett Electronics
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
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VGG R1
B1
R2 C3 C4C5
R3
C1
C14
C15
C6
C7
W1
C8 C13
C11 R4
VDD
C12
C9 C10
C2
MRF5S19090
Rev 02
Figure 2. MRF5S19090 Test Circuit Component Layout
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
16
Gps
14 η
40
30
VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA
12 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
IRL Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
10
20
−20
IM3
8
ACPR
−40
6 −60
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
0
−10
−20
−30
−40
−50
17
IDQ = 1300 mA
16 1100 mA
850 mA
15
650 mA
14
450 mA
13
12
1
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
−30
3rd Order
−35
−40
5th Order
−45
7th Order
−50
−55
0.1
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
1 10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
−15
VDD = 28 Vdc
−20 f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−25
−30
−35
−40 IDQ = 450 mA
−45
−50
1100 mA
650 mA
1300 mA
850 mA
−55
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
56
55 Ideal
54 P3dB = 51.21 dBm (132.13 W)
53
52 P1dB = 50.82 dBm (120.78 W)
51
50 Actual
49
48
47
46
45
31 32 33
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 1960 MHz
34 35 36 37 38 39 40 41 42
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
For More Information On This Product,
5
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