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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF5P21240/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
TICDyhQpai=cnan2le2xl –B1ca1an0rd0riwemridAWth, –f=1C3=D.M8241A3MP5HeMrzfH,oArzm,dfja2anc=ceen2t1foC4r5hVaMDnDHnez=l,s2M8 eVaosltusr,ed over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power — 52 Watts Avg.
Power Gain — 13 dB
Efficiency — 24%
IM3 — –36 dBc
ACPR — –39 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz,
180 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P21240R6
2170 MHz, 52 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375D–04, STYLE 1
NI–1230
www.DataSheet4U.com
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 55°C, 180 W CW
Case Temperature 45°C, 52 W CW
Symbol
VDSS
VGS
PD
Tstg
TJ
CW
Symbol
RθJC
Value
65
–0.5, +15
500
2.86
–65 to +150
200
180
Max
0.35
0.40
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA
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Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C6 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 µAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1100 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.26 0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs — 7.5 — S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss — 2.75 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
2–Carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Gps 12 13 — dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η 22.5 24 — %
Third Order Intermodulation Distortion
IM3 — –36 –34 dBc
(VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
ACPR
–39 –37 dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
IRL —
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
–12 –9
dB
MRF5P21240R6
2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
B1
R4
VGG +
+
C17 C15 C13 C9
R1 C5
Z11
Z3 Z5 Z9
++
C19 C20
Z15
C8 C12
+ + + VDD
C21 C22 C27
Z13 Z17 Z19
Z21
C4
Z8
RF
INPUT
Z1 Z2
C1
Z7
Z4 Z6
Z10
DUT
Z23 Z24
RF
OUTPUT
C2
B2
Z12
R3
VGG +
+
C18 C16 C14 C10
R2 C6
Z14 Z18 Z20
Z22
C3
Z16
++
C23 C24
C7 C11
+ + + VDD
C25 C26 C28
Z1
Z2, Z23
Z3, Z22
Z4, Z21
Z5, Z6
Z7, Z8
Z9, Z10
0.898x 0.080Microstrip
0.775x 0.136Microstrip
0.060x 0.080Microstrip
1.867x 0.080Microstrip
0.443x 0.080Microstrip
0.100x 0.080Microstrip
0.490x 0.540Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z24
PCB
1.270x 0.058Microstrip
0.250x 0.500Microstrip
0.850x 0.150Microstrip
0.535x 0.390Microstrip
0.218x 0.080Microstrip
0.825x 0.080Microstrip
Arlon GX–0300–55–22, 0.030, εr = 2.55
Figure 1. MRF5P21240R6 Test Circuit Schematic
Table 1. MRF5P21240R6 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
B1, B2
Short Ferrite Beads
2743019447
C1, C2, C3, C4
18 pF Chip Capacitors
100B180JCA500X
C5, C6, C7, C8
6.8 pF Chip Capacitors
100B6R8JCA500X
C9, C10, C11, C12
0.1 µF Chip Capacitors
CDR33BX104AKWS
C13, C14
1000 pF Chip Capacitors
100B102JCA500X
C15, C16
4.7 µF Tantalum Capacitors
T491C475M050
C17, C18
10 µF Electrolytic Capacitors
EEV–HB1H100P
C19, C20, C21, C22
C23, C24, C25, C26
22 µF Tantalum Capacitors
T491X226K035AS4394
C27, C28
100 µF Electrolytic Capacitors
517D107M050BB6A
R1, R2
1.0 kW, 1/8 W Chip Resistors
R3, R4
10 W, 1/8 W Chip Resistors
Manufacturer
Fair Rite
ATC
ATC
Kemet
ATC
Kemet
Panasonic
Kemet
Sprague
MOTOROLA RF DEVICE DATA
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MRF5P21240R6
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Freescale Semiconductor, Inc.
MRF5P21240 Rev. 5
C17 C15 C13 C9
B1 R1
R4 C5
C1
C19 C22 C12
C8
C20 C21
C27
C4
C2
R3 C6
B2 R2
C18 C16 C14 C10
C3
C24 C25
C23
C28
C7 C26 C11
Figure 2. MRF5P21240R6 Test Circuit Component Layout
MRF5P21240R6
4
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
15 40
14
13 Gps
12 η
11
10 IRL
9
VDD = 28 Vdc, Pout = 52 W (Avg.), IDQ = 2200 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
35
30
25
20
-25
-30
8 IM3
-35
7
6 ACPR
-40
-45
5 -50
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. 2–Carrier W–CDMA Broadband Performance
-5
-10
-15
-20
-25
-30
14
IDQ = 2640 mA
2420 mA
13.5 2200 mA
13 1980 mA
1760 mA
12.5
12
2
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
300
-25
3rd Order
-30
-35
-40 5th Order
-45 7th Order
-50
-55
0.1
VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 2200 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
1 10 30
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
-25
-30
-35
-40
2200 mA
-45
IDQ = 2640 mA
2420 mA
-50 1980 mA
1760 mA
-55
2
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
10 100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
60
59
Ideal
58
P3dB = 55.03 dBm (318.24 W)
57
56
P1dB = 54.36 dBm (272.9 W)
55
Actual
54
53
52 VDD = 28 Vdc, IDQ = 2200 mA
51 Pulse CW, 8 µsec(on), 1.6 msec(off)
Center Frequency = 2140 MHz
50
36 37 38 39 40 41 42 43 44 45 46
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
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MRF5P21240R6
5