APTM100A13D.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 APTM100A13D 데이타시트 다운로드

No Preview Available !

APTM100A13D
Phase leg
with Series diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 130mmax @ Tj = 25°C
ID = 65A @ Tc = 25°C
www.DataSheet4U.com
G1 VBUS
S1
S2
G2
0/VBUS
OUT
Application
Zero Current Switching resonant mode
Features
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
65
49
240
±30
130
1250
24
30
1300
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6

No Preview Available !

APTM100A13D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 1.5mA
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
1000
3
Max
600
2
130
5
±450
Unit
V
µA
mA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 65A
Inductive switching @ 125°C
VGS = 15V
VBus =667V
ID = 65A
RG = 0.5
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
Min Typ Max Unit
15.2
2.6 nF
0.44
562
75 nC
363
9
9
50
ns
24
2.13
mJ
0.46
4.5
mJ
0.57
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IRM
IF(A V)
VF
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
VR=1000V
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 120A
VR = 670V
di/dt = 400A/µs
IF = 120A
VR = 670V
di/dt = 400A/µs
Min Typ Max Unit
1000
V
Tj = 125°C
1 mA
Tc = 100 °C
120
A
1.9 2.5
2.2 V
Tj = 125°C
1.7
Tj = 25°C
Tj = 125°C
280
350
ns
Tj = 25°C
Tj = 125°C
1.5
7.2
µC
APT website – http://www.advancedpower.com
2-6

No Preview Available !

APTM100A13D
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
Transistor
Series diode
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TST G
TC
Torque
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink M6
For terminals M5
Wt Package Weight
Min Typ Max Unit
0.10
0.46
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
Package outline
APT website – http://www.advancedpower.com
3-6

No Preview Available !

APTM100A13D
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1 0.9
0.08 0.7
0.06 0.5
0.04 0.3
0.02 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
180
150 VGS=15&10V
7V
6.5V
120
90 6V
60
30
0
0
5.5V
5V
4 8 12 16 20 24 28
VDS, Drain to Source Voltage (V)
1.4 RDS(on) vs Drain Current
Normalized to
1.3 VGS=10V @ 32.5A
VGS=10V
1.2
1.1 VGS=20V
1
0.9
0.8
0
30 60 90 120 150 180
ID, Drain Current (A)
Transfert Characteristics
360
300
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
240
180
120
60
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
123456789
VGS, Gate to Source Voltage (V)
10
DC Drain Current vs Case Temperature
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6

No Preview Available !

Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM100A13D
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=32.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by RDSon
100µs
1ms
10
1
1
Single pulse
TJ=150°C
10ms
100ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=65A
TJ=25°C
VDS=200V
10
8
VDS=500V
VDS=800V
6
4
2
0
0 120 240 360 480 600 720 840
Gate Charge (nC)
APT website – http://www.advancedpower.com
5-6