APTM120A20D.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 APTM120A20D 데이타시트 다운로드

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APTM120A20D
Phase leg
with Series diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 200mmax @ Tj = 25°C
ID = 50A @ Tc = 25°C
www.DataSheet4U.com
G1 VBUS
S1
S2
G2
0/VBUS
OUT
Application
Zero Current Switching resonant mode
Features
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1200
50
37
200
±30
200
1250
12
30
1300
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM120A20D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 1.5mA
VGS = 0V,VDS = 1200V Tj = 25°C
VGS = 0V,VDS = 1000V Tj = 125°C
VGS = 10V, ID = 25A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
1200
3
Max
1.5
6
200
5
±450
Unit
V
mA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 600V
ID = 50A
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 50A
RG =0.8
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8
Min Typ Max Unit
15.2
2.2 nF
0.42
600
84 nC
390
10
10 ns
68
36
2.79
mJ
0.6
5.6
mJ
0.81
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IF(A V)
VF
Maximum Repetitive Reverse Voltage
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 120A
IF = 2400A
IF = 120A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt = 400A/µs
IF = 120A
VR = 800V
di/dt = 400A/µs
Min Typ Max Unit
1200
V
Tc = 70°C
Tj = 125°C
120
2 2.5
2.3
1.8
A
V
Tj = 25°C
Tj = 125°C
400
470
ns
Tj = 25°C
Tj = 125°C
2.4
8
µC
APT website – http://www.advancedpower.com
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APTM120A20D
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
Transistor
Series diode
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TST G
TC
Torque
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Package outline
Min Typ Max Unit
0.1
0.46
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
APT website – http://www.advancedpower.com
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APTM120A20D
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1 0.9
0.08 0.7
0.06 0.5
0.04 0.3
0.02 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
150
120
VGS=15, 10 & 8V
7V
6.5V
90
6V
60
30
0
0
5.5V
5V
5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
1.4 RDS(on) vs Drain Current
Normalized to
1.3 VGS=10V @ 25A
1.2 VGS=10V
1.1
1 VGS=20V
0.9
0.8
0
30 60 90
ID, Drain Current (A)
120
Transfert Characteristics
180
150
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
90
60 TJ=25°C
30
0
0
TJ=125°C
TJ=-55°C
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VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
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Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM120A20D
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=25A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by RDSon
100µs
10
1
1
1ms
Single pulse
TJ=150°C
10ms
10 100 10102000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
10
ID=50A
TJ=25°C
VDS=240V
VDS=600V
8 VDS=960V
6
4
2
0
0 120 240 360 480 600 720 840
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6