APTM120U100D-ALN.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 APTM120U100D-ALN 데이타시트 다운로드

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APTM120U100D-AlN
Single switch
with Series diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 100mmax @ Tj = 25°C
ID = 116A @ Tc = 25°C
www.DataSheet4U.com
SK
G
SD
Application
Zero Current Switching resonant mode
Features
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1200
116
86
464
±30
100
3290
24
50
3200
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM120U100D-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V, ID = 1mA
VGS = 0V,VDS = 1200V Tj = 25°C
VGS = 0V,VDS = 1000V Tj = 125°C
VGS = 10V, ID = 58A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
1200
3
Max
1
4
100
5
±400
Unit
V
mA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 600V
ID = 116A
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2
Min Typ Max Unit
28.9
4.4 nF
0.8
1100
128 nC
716
20
17 ns
245
62
5
mJ
4.6
9.2
mJ
5.6
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IF(A V)
VF
Maximum Repetitive Reverse Voltage
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 180A
IF = 360A
IF = 180A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 180A
VR = 800V
di/dt = 800A/µs
IF = 180A
VR = 800V
di/dt = 800A/µs
Min Typ Max Unit
1200
V
Tc = 70°C
Tj = 125°C
180
2 2.5
2.3
1.8
A
V
Tj = 25°C
Tj = 125°C
370
500
ns
Tj = 25°C
Tj = 125°C
3.9
20.7
µC
APT website – http://www.advancedpower.com
2–6

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APTM120U100D-AlN
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
Transistor
Series diode
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TST G
TC
Torque
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Package outline
Min Typ Max Unit
0.038
0.22
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
APT website – http://www.advancedpower.com
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APTM120U100D-AlN
Typical Performance Curve
0.04
0.035
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.03
0.025
0.02
0.7
0.5
0.015
0.3
0.01
0.005
0
0.1
0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
280
240
VGS=15, 10V
7V
200
6V
160
5.5V
120
80
40
0
0
5V
4.5V
5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
1.4 RDS(on) vs Drain Current
Normalized to
1.3 VGS=10V @ 58A
1.2 VGS=10V
1.1
1 VGS=20V
0.9
0.8
0
40 80 120 160 200 240
ID, Drain Current (A)
Transfert Characteristics
320
280
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
240
200
160
120 TJ=-55°C
80 TJ=25°C
40 TJ=125°C
0
0123456
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
120
100
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6

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Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM120U100D-AlN
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=58A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100µs
100
limited by RDSon
1ms
10
1
1
10ms
Single pulse
TJ=150°C
10 100 10102000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=116A
TJ=25°C
VDS=240V
10 VDS=600V
8 VDS=960V
6
4
2
0
0 300 600 900 1200 1500
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6