APTM20AM05F.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 APTM20AM05F 데이타시트 다운로드

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APTM20AM05F
Phase leg
MOSFET Power Module
VDSS = 200V
RDSon = 5mW max @ Tj = 25°C
ID = 317A @ Tc = 25°C
www.DataSheet4U.com
G1 VBUS
S1
S2
G2
0/VBUS
OUT
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
· Motor control
Features
· Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
317
237
1268
±30
5
1136
89
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM20AM05F
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS
IDSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0V, ID = 500µA
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
200
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 158.5A
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
3
Max
500
2000
5
5
±200
Unit
V
µA
mW
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 100V
ID = 300A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
RG = 1.2W
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
Min Typ Max Unit
27.4
8.72 nF
0.38
448
172 nC
188
28
56 ns
81
99
1852
1820
µJ
2432
2124
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery w
VGS = 0V, IS = - 300A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = -300A
VR = 100V
diS/dt = 400A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS £ - 300A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C
Min Typ Max Unit
317
234
A
1.3 V
8 V/ns
220 ns
420
4.28 µC
11.6
APT website – http://www.advancedpower.com
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APTM20AM05F
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
Operating junction temperature range
TSTG
TC
Torque
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Min Typ Max Unit
0.11 °C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
Package outline
APT website – http://www.advancedpower.com
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APTM20AM05F
Typical Performance Curve
0.12
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.08 0.7
0.06
0.5
0.04 0.3
0.02
0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
1000
800
Low Voltage Output Characteristics
VGS=15&10V 9V
600 7.5V
7V
400
6.5V
200 6V
5.5V
0
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
Transfert Characteristics
800
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
400
200
0
2
TJ=25°C
TJ=125°C
TJ=-55°C
3456789
VGS, Gate to Source Voltage (V)
1.2
1.15
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 158.5A
1.1
1.05
VGS=10V
1
0.95
VGS=20V
0.9
0
100 200 300 400
ID, Drain Current (A)
DC Drain Current vs Case Temperature
320
280
240
200
160
120
80
40
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
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Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM20AM05F
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 158.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
10000
1000
limited
by RDSon
100µs
100
1ms
10ms
10
Single pulse
TJ=150°C
1
DC line
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=300A
10 TJ=25°C
VDS=40V
VDS=100V
8 VDS=160V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
APT website – http://www.advancedpower.com
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