APTM20SKM05.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 APTM20SKM05 데이타시트 다운로드

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APTM20SKM05
Buck chopper
MOSFET Power Module
VDSS = 200V
RDSon = 5mW max @ Tj = 25°C
ID = 317A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
www.DataSheet4U.com
G1 VBUS
S1
0/VBUS
OUT
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
317
237
1268
±30
5
1136
89
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM20SKM05
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA
200
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 158.5A
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
3
Max
200
1000
5
5
±200
Unit
V
µA
mW
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 100V
ID = 300A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
RG = 1.2W
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
Min Typ Max Unit
27.4
8.72 nF
0.38
448
172 nC
188
28
56 ns
81
99
1852
1820
µJ
2432
2124
µJ
Diode ratings and characteristics
Symbol Characteristic
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 133V
di/dt = 800A/µs
IF = 240A
VR = 133V
di/dt = 800A/µs
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
Tc = 85°C
Tj = 125°C
240
1.1 1.15
1.4
0.9
A
V
Tj = 25°C
Tj = 125°C
31
60
ns
Tj = 25°C
Tj = 125°C
240
1000
nC
APT website – http://www.advancedpower.com
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APTM20SKM05
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
Transistor
Diode
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
M6
For terminals
M5
Wt Package Weight
Min Typ Max Unit
0.11
0.23
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
Package outline
APT website – http://www.advancedpower.com
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APTM20SKM05
Typical Performance Curve
0.12
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.08 0.7
0.06
0.5
0.04 0.3
0.02
0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
1000
800
Low Voltage Output Characteristics
VGS=15&10V 9V
600 7.5V
7V
400
6.5V
200 6V
5.5V
0
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
Transfert Characteristics
800
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
400
200
0
2
TJ=25°C
TJ=125°C
TJ=-55°C
3456789
VGS, Gate to Source Voltage (V)
1.2
1.15
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 158.5A
1.1
1.05
VGS=10V
1
0.95
VGS=20V
0.9
0
100 200 300 400
ID, Drain Current (A)
DC Drain Current vs Case Temperature
320
280
240
200
160
120
80
40
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
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Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM20SKM05
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 158.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
10000
1000
limited
by RDSon
100µs
100
1ms
10ms
10
Single pulse
TJ=150°C
1
DC line
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=300A
10 TJ=25°C
VDS=40V
VDS=100V
8 VDS=160V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
APT website – http://www.advancedpower.com
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