APTM20UM09S.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 APTM20UM09S 데이타시트 다운로드

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APTM20UM09S
Single switch
Series & parallel diodes
MOSFET Power Module
VDSS = 200V
RDSon = 9mmax @ Tj = 25°C
ID = 195A @ Tc = 25°C
SK
S
G
www.DataSheet4U.com
CR1
Q1
Application
D
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Low stray inductance
- M6 power connectors
- M4 signal connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
195
145
780
±30
9
780
65
30
1300
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM20UM09S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA
200
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Tj = 25°C
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 74.5A
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 4mA
VGS = ±30 V, VDS = 0V
3
Max
400
2000
9
5
±400
Unit
V
µA
mW
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 100V
ID = 195A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 195A
RG = 1.2W
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 195A, RG = 1.2
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 195A, RG = 1.2
Min Typ Max Unit
12.3
4 nF
0.39
217
143 nC
157
28
56 ns
81
99
1029
1011
µJ
1351
1180
µJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
trr Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/µs
Qrr Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/µs
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
Tc = 85°C
Tj = 125°C
120
1.1 1.15
1.4
0.9
A
V
Tj = 25°C
Tj = 125°C
31
60
ns
Tj = 25°C
Tj = 125°C
120
500
nC
APT website – http://www.advancedpower.com
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APTM20UM09S
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 100A
IF = 200A
IF = 100A
trr Reverse Recovery Time
IF = 100A
VR = 133V
di/dt = 200A/µs
Qrr Reverse Recovery Charge
IF = 100A
VR = 133V
di/dt = 200A/µs
Min Typ Max Unit
Tc = 90°C
Tj = 125°C
100
1 1.1
1.4
0.9
A
V
Tj = 25°C
Tj = 125°C
60
110
ns
Tj = 25°C
Tj = 125°C
200
840
nC
Thermal and package characteristics
Symbol Characteristic
Transistor
RthJC Junction to Case
Series diode
Parallel diode
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TSTG
TC
Torque
Storage Temperature Range
Operating Case Temperature
Mounting torque
M4
M6
Wt Package Weight
Min Typ Max Unit
0.16
0.46 °C/W
0.6
2500
V
-40 150
-40 125 °C
-40 100
3
1.2
5
N.m
400 g
APT website – http://www.advancedpower.com
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Package outline
APTM20UM09S
Mounting holes: 4xÆ6.5 mm
APT website – http://www.advancedpower.com
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APTM20UM09S
Typical Performance Curve
0.18
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.9
0.12 0.7
0.1
0.08
0.5
0.06 0.3
0.04
0.02
0
0.1
0.05
0.00001
0.0001
0.001
Single Pulse
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Low Voltage Output Characteristics
600
500
400
VGS=15 & 10V
8V
300
200 7V
100
6V
0
0 2.5 5 7.5 10 12.5
VDS, Drain to Source Voltage (V)
15
Transfert Characteristics
600
VDS > ID(on)xRDS(on)MAX
500 250µs pulse test @ < 0.5 duty cycle
400
300
200
100
0
2
TJ=125°C
TJ=25°C
TJ=-55°C
3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
1.2
1.15
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 74.5A
1.1
1.05
VGS=10V
1
0.95
0.9
0
VGS=20V
100 200 300
ID, Drain Current (A)
400
DC Drain Current vs Case Temperature
200
160
120
80
40
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
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