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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ604
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ604 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Super low on-state resistance:
RDS(on)1 = 30 mMAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 43 mMAX. (VGS = 4.0 V, ID = 23 A)
Low input capacitance:
Ciss = 3300 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 45
m 120
Total Power Dissipation (TC = 25°C) PT 70
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 35
EAS 123
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ604
TO-220AB
2SJ604-S
TO-262
2SJ604-ZJ
2SJ604-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14649EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001

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2SJ604
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = 60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 23 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 23 A
RDS(on)2 VGS = 4.0 V, ID = 23 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 23 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG VDD= 48 V
Gate to Source Charge
QGS VGS = 10 V
Gate to Drain Charge
QGD ID = 45 A
Body Diode Forward Voltage
VF(S-D) IF = 45 A, VGS = 0 V
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Reverse Recovery Time
Reverse Recovery Charge
trr IF = 45 A, VGS = 0 V
Qrr di/dt = 100 A / µs
MIN.
1.5
20
TYP.
2.0
41
23
30
3300
580
230
12
11
77
52
63
11
16
1.0
51
105
MAX. UNIT
10
m 10
2.5
µA
µA
V
S
30 m
43 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
0 10%
VDS ()
VDS
Wave Form
90%
VDS
0
td(on)
90%
VGS
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14649EJ3V0DS

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TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
2SJ604
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
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FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RDS(on) Limited
ID(pulse)
PW
100 µs
=
10
µs
ID(DC) LiPmoitwedeDrCDissipa1ti0onms
1 ms
1
TC = 25˚C
0.1 Single Pulse
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(j-A) = 83.3˚C/W
10
Rth(j-C) = 1.79˚C/W
1
0.1
0.01
10 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Data Sheet D14649EJ3V0DS
Single Pulse
10 100 1000
3

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2SJ604
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
1
TA = 55˚C
25˚C
75˚C
125˚C
VDS = 10 V
Pulsed
2 3 4 5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
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10
1
0.1
0.01
0.01
TA = 125˚C
75˚C
25˚C
55˚C
VDS = 10 V
Pulsed
0.1
1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80 Pulsed
60
VGS = 4.0 V
4.5 V
40 10 V
20
0
1
10
100
1000
ID - Drain Current - A
120
100
80
60
40
20
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
4.5 V
4.0 V
Pulsed
1 2 3 4 5
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
60
ID = 45 A
23 A
40 9 A
20
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
4.0
3.0
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
2.0
1.0
0
50
0
50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet D14649EJ3V0DS

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2SJ604
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
Pulsed
50 VGS = 4.0 V
4.5 V
40
10 V
30
20
10
0
50
0
ID = 23 A
50 100 150
Tch - Channel Temperature - ˚C
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10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
1000
Coss
100 Crss
10
0.1
VGS = 0 V
f = 1 MHz
1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1 1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10 4.0 V
1
0V
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
VDD = 30 V
VGS = 10 V
RG = 0
td(on)
tr
tf
1
0.1 1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
ID = 45 A
50 VDD = 48 V
30 V
40 12 V
10
VGS 8
30 6
20 4
10
0
0
2
VDS
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
Data Sheet D14649EJ3V0DS
5