2SJ632.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SJ632 데이타시트 다운로드

No Preview Available !

Ordering number : ENN7420
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SJ632
P-Channel Silicon MOSFET
2SJ632
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2062A
[2SJ632]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
(Bottom view)
0.75
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : PCP
www.DataSheet4U.com
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm2!0.8mm)
Tc=25°C
Ratings
--60
±20
--2
--8
1.5
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : GA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--1A, VGS=--4V
min
--60
--1.2
1.6
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
2.4 S
275 360 m
400 560 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32603 TS IM TA-3954 No.7420-1/4

No Preview Available !

2SJ632
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
IS=--2A, VGS=0
Switching Time Test Circuit
VDD= --30V
VIN
0V
--10V
PW=10µs
D.C.1%
VIN
G
ID= --1A
RL=30
D VOUT
P.G 50
2SJ632
S
Ratings
min typ max
Unit
365 pF
39 pF
30 pF
9 ns
24 ns
38 ns
38 ns
9 nC
1.7 nC
1.7 nC
--0.84
--1.2 V
www.DataSheet4U.com
ID -- VDS
--4.0
--5.0V
--3.5
--3.0
--2.5 --3.5V
--2.0
--1.5
VGS= --3.0V
--1.0
--0.5
0
0
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS -- V IT05810
RDS(on) -- VGS
Tc=25°C
ID= --1A
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT05812
--4.0
VDS= --10V
--3.5
ID -- VGS
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT05811
RDS(on) -- Tc
700
650
600
550
500
450
400
350
300
I
D=
--1A,
I D=
V GS= --4V
--1A, VGS=
--10V
250
200
150
100
--60 --40 --20 0
20 40 60 80 100 120 140
Case Temperature, Tc -- °C
IT05813
No.7420-2/4

No Preview Available !

www.DataSheet4U.com
2SJ632
yfs-- ID
10
--10
7
VDS= --10V
7
5
53
2
3
2
1.0
Tc=
--25°C
75°C
7
5
25°C
3
--1.0
7
5
3
2
--0.1
7
5
23
2
IF -- VSD
VGS=0
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
3
2
VDD= --30V
VGS= --10V
23
5 7 --10
IT05814
100
7
5 tf td(off)
3
2 tr
10 td(on)
7
5
3
2
--0.1
23
5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
--10
VDS= --30V
--9 ID= --2A
--8
2
35
IT05816
--7
--6
--5
--4
--0.01
--0.2
1000
7
5
3
2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V IT05815
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
Coss
3 Crss
2
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT05817
ASO
2
--10 IDP= --8A
7
5
3 ID= --2A
2
--1.0
7
5
3
2
<10µs
DC1o0p0emr1a0stimons1ms
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT05818
PD -- Ta
2.0
--0.1 Operation in this area
7
5
is limited by RDS(on).
3
2 Tc=25°C
--0.01 Single pulse
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V IT05819
PD -- Tc
4.0
1.5
1.0
0.5
Mounted on a ceramic board(250mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05820
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT05821
No.7420-3/4

No Preview Available !

2SJ632
www.DataSheet4U.com
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2003. Specifications and information herein are subject
to change without notice.
PS No.7420-4/4