2SD2351.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SD2351 데이타시트 다운로드

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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
General Purpose Transistor (50V, 0.15A)
2SD2707 /2SD2654 /2SD2351 /2SD2226K /2SD2227S
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2654, 2SD2707
2SD2351, 2SD2226K
2SD2227S
Junction temperature
Storage temperature
Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
12
0.15
0.2
0.15
0.2
0.3
150
55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zExternal dimensions (Unit : mm)
2SD2707
ROHM : EMT3
2SD2654
1.2
0.2 0.8 0.2
(2)
(3)
(1)
(1)
(3) (2)
0.8
1.6
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
0.1Min.
2SD2351
(1) Emitter
(2) Base
(3) Collector
zPackaging specifications and hFE
Type
package
hFE
Marking
Code
Basic ordering unit (pleces)
Denotes hFE
2SD2707
VMT3
VW
BJ
T2L
8000
2SD2654
EMT3
VW
BJ
TL
3000
2SD2351
UMT3
VW
BJ
T106
3000
2SD2226K
SMT3
VW
BJ
T146
3000
2SD2227S
SPT
VW
TP
5000
1.25
2.1
ROHM : UMT3
EIAJ : SC-70
0.1Min.
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2SD2226K
1.6
2.8
ROHM : SMT3
EIAJ : SC-59
0.3Min.
Each lead has same dimensions
2SD2227S
42
(1) Emitter
(2) Base
(3) Collector
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Rev.A
1/3

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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
12
820
Typ.
250
3.5
Max.
0.3
0.3
0.3
2700
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=50V
VEB=12V
IC/IB=50mA/5mA
VCE/IC=5V/1mA
VCE=5V, IE=−10mA, f=100MHz
VCB=5V, IE=0A, f=1MHz
zElectrical characteristics curves
2.0
Ta=25°C
1.2µA
1.6 2.0µA
1.8µA
1.6µA
1.2 1.4µA
1.0µA
0.8µA
0.6µA
0.8
0.4µA
0.4 0.2µA
IB=0
00 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics ( Ι )
200
500µA
160 450µA
400µA
350µA
300µA
120
250µA
200µA
150µA
100µA
80 50µA
40
00
Ta=25°C
Measured
using pulse current
48
12
IB=0
16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
200
VCE=5V
100
50
20
10
5
2
1
0.5
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured
using pulse current
VCE=10V
5V
3V
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
10000
5000
2000
1000
500
Ta=100°C
25°C
VCE=5V
Measured
using pulse current
25°C
200
100
50
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
1000
500
Ta=25°C
200
100
IC / IB=50
50
20
20 10
10
5
2
1
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
Rev.A
2/3

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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
1000
500
IC / IB=10
200
100
Ta=100°C
50
25°C
20
10 25°C
5
2
1
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10000
5000
Ta=25°C
2000
1000
500
200
100
50
IC/IB=10
20
50
20
10
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( Ι )
10000
5000
IC/IB=10
2000
1000
500
200
100
50
Ta= 25°C
25°C
100°C
20
10
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
500
200
100
50
20
10
5
Ta=25°C
2
VCE=5V
Measured
1 using pulse current
1 2 5 10 20
50 100200 5001000
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product
vs. emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20 50 100
COLLRCTOR TO BASE VOLTAGE : VCB (V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
Ta=25°C
50 f=1kHz
Vi=100mV(rms)
RL=1k
20
10
5
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1
2
5 10
IB (mA)
Fig.12 Output on resistance
vs. base current
Rev.A
3/3

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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1