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2MBI75UA-120www.DataSheet4U.com
IGBT Module U-Series 1200V / 75A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C1 E2
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
G1 E1
Item
Symbol
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltaga
VGES
Collector current
IC Continuous Tc=25°C
Tc=80°C
ICp 1ms Tc=25°C
Tc=80°C
-IC
-IC pulse
Collector Power Dissipation
PC 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
Screw Torque
Mounting *2
Terminals *2
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
1200
±20
100
75
200
150
75
150
400
+150
-40 to +125
2500
3.5
3.5
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG=9.1
VGE=0V
IF=75A
IF=75A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Min.
4.5
Typ.
6.5
1.9
2.15
1.75
2.00
8
0.36
0.21
0.03
0.37
0.07
1.75
1.85
1.60
1.70
1.39
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT
FWD
With thermal compound
Min.
Typ.
0.05
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
1.0
200
8.5
2.25
2.10
1.20
0.60
1.00
0.30
2.05
1.90
0.35
Max.
0.31
0.48
G2 E2
Unit
V
V
A
W
°C
VAC
N·m
Unit
mA
nA
V
V
nF
µs
V
µs
m
Unit
°C/W
°C/W
°C/W

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2MBI75UA-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
200
VGE=20V 15V
12V
150
100
10V
50
0
0
8V
1234
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
T j=25°C T j=125°C
150
100
50
0
0 1 23 4
Collector-Emitter voltage : VCE [V]
5
100.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
200
VGE=20V 15V
12V
150
100
50
0
0
10V
8V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=150A
Ic=75A
Ic= 37.5A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25°C
Cies
10.0
VGE
1.0 Cres
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
0
0
VCE
100 200 300
Gate charge : Qg [ nC ]
400

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2MBI75UA-120
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1, Tj= 25°C
IGBT Module
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1, Tj=125°C
10000
1000
100
1000
ton
toff
tr
100
tf
toff
ton
tr
tf
10
0
50 100
Collector current : Ic [ A ]
150
10000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C
1000
ton
toff
tr
100
tf
10
1.0
10.0 100.0
Gate resistance : Rg [ ]
1000.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C
75.0
Eon
50.0
25.0
Eoff
0.0
1.0
Err
10.0 100.0
Gate resistance : Rg [ ]
1000.0
10
0
50 100
Collector current : Ic [ A ]
150
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1
15.0
Eoff(125°C)
Eon(125°C)
10.0
5.0
0.0
0
Eoff(25°C)
Eon(25°C)
Err(125°C)
Err(25°C)
50 100
Collector current : Ic [ A ]
150
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9.1,Tj <= 125°C
200
150
100
50
0
0 400 800 1200
Collector - Emitter voltage : VCE [ V ]

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2MBI75UA-120
Forward current vs. Forward on voltage (typ.)
chip
200
150 Tj=25°C
Tj=125°C
100
50
0
0123
Forward on voltage : VF [ V ]
4
IGBT Module
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=9.1
1000
trr (125°C)
trr (25°C)
100 Irr (125°C)
Irr (25°C)
10
0
50 100
Forward current : IF [ A ]
150
1.000
0.100
Transient thermal resistance (max.)
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
Outline Drawings, mm
M232
1.000