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VTM
V•I ChipTM – VTM
Voltage Transformation Module
V048K020T080
K indicates BGA configuration. For other
mounting options see Part Numbering below.
• 48 V to 2 V V•I Chip Converter
• 80 A (120 A for 1 ms)
• High density – 320 A/in3
• 125°C operation
• 1 µs transient response
• >3.5 million hours MTBF
Vf = 26 - 55 V
VOUT = 1.1 - 2.3 V
IOUT = 80 A
K = 1/24
ROUT = 1.5 mmax
©
• Small footprint – 75 A/in2
• Typical efficiency 94% at 2 V/50 A
• Low weight – 0.5 oz (14 g)
• No output filtering required
• Pick & Place / SMD
• BGA or J-Lead packages
Actual size
Product Description
Absolute Maximum Ratings
The V048K020T080 VI Chip Voltage Transformation
Module (VTM) breaks records for speed, density and
Parameter
Values
Unit
Notes
efficiency to meet the demands of advanced DSP,
FPGA, ASIC, processor cores and microprocessor
applications at the point of load (POL) while providing
+In to -In
+In to -In
-1.0 to 60.0
Vdc
100 Vdc For 100 ms
isolation from input to output. It achieves a response
PC to -In
-0.3 to 7.0
Vdc
time of less than 1 µs and delivers up to 80 A in a
TM to -In
-0.3 to 7.0
Vdc
volume of less than 0.25 in3 while providing low output
voltages with unprecedented efficiency. It may be
paralleled to deliver hundreds of amps at an output
voltage settable from 1.1 to 2.3 Vdc.
P R E L I M I N A RYThe VTM V048K020T080’s nominal output voltage is
2 Vdc from a 48 Vdc input factorized bus, Vf, and is
controllable from 1.1 to 2.3 Vdc at no load, and from
1.1 to 2.2 Vdc at full load, over a Vf input range of 26
to 55 Vdc. It can be operated either open- or closed-loop
depending on the output regulation needs of the
application. Operating open-loop, the output voltage
tracks its Vf input voltage with a transformation ratio,
K = 1/24, and an output resistance, ROUT = 1.3 milliohm, to
enable applications requiring a programmable low
output voltage at high current and high efficiency.
VC to -In
-0.3 to 19.0
Vdc
+Out to -Out
-0.1 to 4.0
Vdc
Isolation voltage
Operating junction temperature
2,250
-40 to 125
Vdc Input to Output
°C See Note
Output current
80 A Continuous
Peak output current
Case temperature during reflow
120
208
A For 1 ms
°C
Storage temperature
-40 to 150
°C
Output power
Peak output power
174 W Continuous
261 W For 1 ms
Note: The referenced junction is defined as the semiconductor having the highest temperature.
This temperature is monitored by the temperature monitor (TM) signal and by a shutdown comparator.
Closing the loop back to an input Pre-Regulation
Module (PRM) or DC-DC converter can compensate
for ROUT.
Part Numbering
The 2 V VTM achieves break-through current density of
320 A/in3 in a VI Chip package compatible with
standard pick-and-place and surface mount assembly
processes. The VI Chip BGA package supports in-board
mounting with a low profile of 0.16" (4 mm) over the
board. A J-lead package option supports on-board
surface mounting with a profile of only 0.25" (6 mm)
over the board. The VTM’s fast dynamic response and
low noise eliminate the need for bulk capacitance at the
load, substantially increasing the POL density while
improving reliability and decreasing cost.
V 048
Voltage
Transformation
Module
Input Voltage
Designator
K
Configuration Options
F = On-board (Fig.15)
K = In-board (Fig.14)
020 T 080
Output Voltage
Designator
(=VOUT x10)
Output Current
Designator
(=IOUT)
Product Grade Temperatures (°C)
Grade Storage Operating
T -40 to150 -40 to125
Vicor Corporation
Tel: 800-735-6200
vicorpower.com
V•I Chip Voltage Transformation Module V048K020T080 Rev. 1.2
Page 1 of 15

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Specifications
INPUT (Conditions are at 48 Vin, full load, and 25°C ambient unless otherwise specified)
Parameter
Input voltage range
Input dV/dt
Input overvoltage turn-on
Input overvoltage turn-off
Input current
Input reflected ripple current
No load power dissipation
Internal input capacitance
Internal input inductance
Min Typ Max Unit
Note
26 48 55 Vdc Operable down to zero V with external bias voltage
1 V/µs
56.0 Vdc
59.5 Vdc
3.7 Adc
170
mA p-p
Using test circuit in Fig.16; See Fig.1
2.50 3.15
W
4 µF
20 nH
OUTPUT (Conditions are at 48 Vin, full load, and 25°C ambient unless otherwise specified)
Parameter
Rated DC current
P R E L I M I N A RYPeakrepetitivecurrent
DC current limit
Current share accuracy
Efficiency
Half load
Full load
Internal output inductance
Internal output capacitance
Load capacitance
Output overvoltage setpoint
Min Typ Max Unit
0 80 Adc
120 A
82 99 112 Adc
5 10 %
94.0 94.2
%
93.0 93.2
%
0.8 nH
306 µF
56,300
µF
2.33 Vdc
Note
Max pulse width 1ms, max duty cycle 10%,
baseline power 50%
See Parallel Operation on page 10
See Fig.3, 2 Vout
See Fig.3, 2 Vout
Effective value
Output ripple voltage
No external bypass
53 65 mV See Figs.2 and 5
100 µF bypass capacitor
2 mV See Fig.6
Effective switching frequency
2.52 2.65 2.78 MHz
Fixed, 1.33 MHz per phase
Line regulation
K
0.0413
1/24 0.0421
VOUT = K•VIN at no load
Load regulation
ROUT
1.3 1.5 m
See Fig.19
Transient response
Voltage overshoot
20 mV 80 A load step with 100 µF CIN; See Figs.7 and 8
Response time
200 ns See Figs.7 and 8
Recovery time
1 µs See Figs.7 and 8
Vicor Corporation
Tel: 800-735-6200
vicorpower.com
V•I Chip Voltage Transformation Module V048K020T080 Rev. 1.2
Page 2 of 15

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Specifications
WAVEFORMS
Figure 1— Input reflected ripple current at full load and 48 Vin
Output Ripple vs Load
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80
Output Currrent (A)
Figure 2— Output voltage ripple vs. output current at 2 Vout
with no POL bypass capacitance.
Efficiency vs. Output Current
95
94
93
92
91
90
89
88
87
86
85
0
2.0 V
1.8 V
1.5 V
1.2 V
10 20 30 40 50 60 70 80
Output Current (A)
Figure 3— Efficiency vs. output current and output voltage
Power Dissipation vs. Output Current
14
12 2.0V
1.8V
1.5V
10 1.2V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Output Current (A)
Figure 4—Power dissipation as a function of output current and
output voltage
Figure 5— Output voltage ripple at full load and 2 Vout;
without any external bypass capacitor.
Figure 6—Output voltage ripple at full load and 2 Vout with
100 µF ceramic external bypass capacitance and 20 nH
distribution inductance.
Vicor Corporation
Tel: 800-735-6200
vicorpower.com
V•I Chip Voltage Transformation Module V048K020T080 Rev. 1.2
Page 3 of 15

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Specifications, continued
PRELIMINARY
Figure 7— 0-80 A step load change with 100 µF input
capacitance and no output capacitance.
Figure 8— 80-0 A step load change with 100 µF input
capacitance and no output capacitance.
GENERAL
Parameter
MTBF
MIL-HDBK-217F
Isolation specifications
Voltage
Capacitance
Resistance
Agency approvals (pending)
Mechanical parameters
Weight
Dimensions(BGA version)
Length
Width
Height
Min Typ Max
3.5
2,250
10
2,500
cTÜVus
CE Mark
0.5 / 14.0
1.26 / 32
0.85 / 21.5
0.23 / 5.9
Unit
Mhrs
Vdc
pF
M
oz / g
in / mm
in / mm
in / mm
Note
25°C, GB
Input to Output
Input to Output
Input to Output
UL/CSA 60950, EN 60950
Low voltage directive
See mechanical drawing, Figs.10 and 12
Auxiliary Pins (Conditions are at 48 Vin, full load, and 25°C ambient unless otherwise specified)
Parameter
Primary Control (PC)
DC voltage
Module disable voltage
Module enable voltage
Current limit
Disable delay time
Temperature Monitor (TM)
27°C setting
Temperature coefficient
Full range accuracy
Current limit
VTM Control (VC)
External boost voltage
External boost duration
Min Typ Max Unit
4.8 5.0 5.2 Vdc
2.4 2.5
Vdc
2.5 2.6 Vdc
2.4 2.5 2.9 mA
4 10 µs
3.00
10
±5
100
Vdc
mV/°C
°C
µA
12.0 14.0 19.0
10
Vdc
ms
Note
Source only
PC low to Vout low
Operating junction temperature
Operating junction temperature
Source only
Required for VTM start up without PRM
Vin must be >26 V for VTM to remain operating
without boost voltage.
Vicor Corporation
Tel: 800-735-6200
vicorpower.com
V•I Chip Voltage Transformation Module V048K020T080 Rev. 1.2
Page 4 of 15

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Specifications, continued
THERMAL
Symbol
RθJC
RθJB
RθJA
RθJA
Parameter
Over temperature shutdown
Thermal capacity
Junction-to-case thermal impedance
Junction-to-BGA thermal impedance
Junction-to-ambient 1
Junction-to-ambient 2
Min
125
Typ Max
Unit
130 135
°C
0.61 Ws/°C
1.1 °C/W
2.1 °C/W
6.5 °C/W
5.0 °C/W
Notes
1. V048K020T080 surface mounted in-board to a 2" x 2" FR4 board, 4 layers 2 oz Cu, 300 LFM.
2. V048K020T080 with a 0.25"H heatsink surface mounted on FR4 board, 300 LFM.
Note
Junction temperature
V•I CHIP STRESS DRIVEN PRODUCT QUALIFICATION PROCESS
Test
High Temperature Operational Life (HTOL)
P R E L I M I N A RYTemperaturecycling
High temperature storage
Moisture resistance
Temperature Humidity Bias Testing (THB)
Pressure cooker testing (Autoclave)
Highly Accelerated Stress Testing (HAST)
Solvent resistance/marking permanency
Mechanical vibration
Mechanical shock
Electro static discharge testing – human body model
Standard
JESD22-A-108-B
JESD22-A-104B
JESD22-A-103A
JESD22-A113-B
EIA/JESD22-A-101-B
JESD22-A-102-C
JESD22-A-110B
JESD22-B-107-A
JESD22-B-103-A
JESD22-B-104-A
EIA/JESD22-A114-A
Environment
125°C, Vmax, 1,008 hrs
-55°C to 125°C, 1,000 cycles
150°C, 1,000 hrs
Moisture sensitivity Level 5
85°C, 85% RH, Vmax, 1,008 hrs
121°C, 100% RH, 15 PSIG, 96 hrs
130°C, 85% RH, Vmax, 96 hrs
Solvents A, B & C as defined
20g peak, 20-2,000 Hz, test in X, Y & Z directions
1,500g peak 0.5 ms pulse duration, 5 pulses in 6 directions
Meets or exceeds 2,000 Volts
Electro static discharge testing – machine model
EIA/JESD22-A115-A
Meets or exceeds 200 Volts
Highly Accelerated Life Testing (HALT)
Per Vicor Internal
Test Specification*
Operation limits verified, destruct margin determined
Dynamic cycling
Per Vicor internal
test specification*
Constant line, 0-100% load, -20°C to 125°C
* For details of the test protocols see Vicor’s website.
V•I CHIP BALL GRID ARRAY INTERCONNECT QUALIFICATION
Test
BGA solder fatigue evaluation
Solder ball shear test
Standard
IPC-9701
IPC-SM-785
IPC-9701
Environment
Cycle condition: TC3 (-40 to +125°C)
Test duration: NTC-B (500 failure free cycles)
Failure through bulk solder or copper pad lift-off
Vicor Corporation
Tel: 800-735-6200
vicorpower.com
V•I Chip Voltage Transformation Module V048K020T080 Rev. 1.2
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