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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
D965 TRANSISTOR NPN
TO 92
FEATURES
Power dissipation
PCM : 0.75 W Tamb=25
Collector current
ICM : 5
A
Collector-base voltage
V(BR)CBO : 42
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Ic=1 A IE=0
Ic= 1 mA IB=0
42
22
V
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE= 10 A IC=0
VCB= 30 V , IE=0
6
V
0.1 A
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
HFE 1
HFE 2
HFE 3
VCE(sat)
VEB= 6 V IC=0
VCE= 2 V, IC= 0.15
mA
VCE= 2V, IC = 500 mA
VCE= 2V, IC = 2000
mA
IC=3000mA,IB=100 mA
150
340
150
0.1 A
950
0.35 V
CLASSIFICATION OF HFE(2)
Rank
Range
R
340-600
T
560-950

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TO-92 PACKAGE OUTLINE DIMENSIONS
D
b
D1
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015