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ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GJ122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ122 is designed for use in general purposes and low speed switching applications.
Features
High DC current gain
Built-in a damper diode at E-C
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current
IC
Total Power Dissipation(Tc=25 )
PD
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55 ~ +150
100
100
5
5
20
Unit
V
V
V
A
W
Electrical Characteristics (Rating at 25 ambient temperature unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
100 - - V IC=1mA, IE=0
100 - - V IC=30mA, IB=0
BVEBO
ICBO
ICEO
5 - - V IE=1mA, IC=0
- - 10 A VCB=100V, IE=0
- - 10 A VCE=50V, IB=0
IEBO
*VCE(sat)1
*VCE(sat)2
- - 2 mA VEB=5V, IC=0
- - 2 V IC=3A, IB=16mA
- - 4 V IC=5A, IB=20mA
*VBE(sat)
*VBE(on)
*hFE1
- - 4 V IC=5A, IB=50mA
- - 2.5 V VCE=3V, IC=3A
1 - - K VCE=3V, IC=500mA
*hFE2
Cob
1 - - K VCE=3V, IC=3A
- - 200 pF VCB=10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GJ122
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Characteristics Curve
ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GJ122
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ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ122
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