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Pb Free Plating Product
ISSUED DATE :2005/08/24
REVISED DATE :
GJ3302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
50m
16A
Description
The GJ3302 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
16
10
25
20
0.16
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
6.4
110
Unit
/W
/W
GJ3302
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ISSUED DATE :2005/08/24
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
Static Drain-Source On-Resistance2
Total Gate Charge2
RDS(ON)
Qg
Gate-Source Charge
Qgs
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
Td(on)
Rise Time
Tr
Turn-off Delay Time
Td(off)
Fall Time
Tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
25
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250uA
- 4.0 V VDS=VGS, ID=250uA
- ±100 nA VGS= ±20V
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
- 50 m VGS=10V, ID=8A
7.4 13
ID=10A
2.2 - nC VDS=20V
4.2 -
VGS=10V
8-
7.4 -
11 -
3-
VDS=15V
ID=16A
ns VGS=10V
RG=3.3
RD=0.94
164 290
158 -
62 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
29
21
Max.
1.3
-
-
Unit Test Conditions
V IS=16A, VGS=0V
Ns IS=16A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ3302
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Characteristics Curve
ISSUED DATE :2005/08/24
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Type Power Dissipation
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ3302
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/08/24
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ3302
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