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Pb Free Plating Product
ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
GSS4532
N-CH BVDSS 30V
N-CH RDS(ON) 50m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
5A
-30V
N-CH RDS(ON) 70m
Description
N-CH ID
-4A
The GSS4532 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,4
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
30 -30
20 20
5 -4
4 -3.2
20 -20
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4532
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ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
N-Channel Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.037
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 8 - S VDS=10V, ID=5A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 50 m VGS=10V, ID=5A
- 70
VGS=4.5V, ID=4.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 10.2 -
ID=5A
Qgs - 1.2 - nC VDS=10V
Qgd - 3.4 -
VGS=10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-6-
-9-
- 15 -
- 5.5 -
VDS=10V
ID=1A
ns VGS=10V
RG=6
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 240 -
- 145 -
- 55 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1.7
20
Unit Test Conditions
V IS=1.7A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
4. Pulse width 10us, duty cycle 1%.
GSS4532
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ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
P-Channel Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
-30
-
-
BVDSS / Tj - -0.028 -
VGS(th) -1.0 - -3.0
gfs - 5 -
IGSS - - 100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-4A
nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 70 m VGS=-10V, ID=-4A
- 90
VGS=-4.5V, ID=-3A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 18.3 -
ID=-4A
Qgs - 3.6 - nC VDS=-10V
Qgd - 1.5 -
VGS=-10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
8
-
VDS=-10V
Tr
Td(off)
-
-
9
21
-
-
ID=-1A
ns VGS=-10V
RG=6
Tf - 10 -
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 760 -
- 345 -
- 90 -
VGS=0V
pF VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
-1.2
-1.7
-20
Unit Test Conditions
V IS=-1.7A, VGS=0V, Tj=25
A VD=VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
4. Pulse width 10us, duty cycle 1%.
GSS4532
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Characteristics Curve N-Channel
ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSS4532
Fig 6. Type Power Dissipation
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N-Channel
ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS4532
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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