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Pb Free Plating Product
ISSUED DATE :2006/04/06
REVISED DATE :
GSS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
20m
6.8A
Description
The GSS9922E provides the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @Ta=25
ID @Ta=70
IDM
PD @Ta=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
±12
6.8
5.4
25
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Unit
/W
GSS9922E
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ISSUED DATE :2006/04/06
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.05
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V VDS=VGS, ID=1mA
Forward Transconductance
gfs
- 22 -
S VDS=4.5V, ID=6A
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 10 uA VDS=20V, VGS=0
- 100 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 20 m VGS=4.5V, ID=6A
- 25
VGS=2.5V, ID=4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 25 40
ID=6A
Qgs - 3 - nC VDS=16V
Qgd - 9 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 11 -
VDS=15V
Tr
Td(off)
-
-
12
47
-
-
ID=1A
ns VGS=4.5V
RG=3.3
Tf - 23 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1730 2770
VGS=0V
- 280 -
pF VDS=20V
- 240 -
f=1.0MHz
Gate Resistance
Rg - 2.2 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit Test Conditions
V IS=0.84A, VGS=0V
ns IS=6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135
/W when mounted on Min. copper pad.
GSS9922E
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Characteristics Curve
ISSUED DATE :2006/04/06
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSS9922E
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2006/04/06
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
135 /W
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS9922E
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