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Pb Free Plating Product
ISSUED DATE :2005/01/07
REVISED DATE :2005/09/29C
GSS9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
30m
6A
Description
The GSS9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
12
6.0
4.8
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Unit
/W
GSS9926E
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ISSUED DATE :2005/01/07
REVISED DATE :2005/09/29C
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
-
0.1
-
15.6
-
- V VGS=0, ID=250uA
- V/ Reference to 25 , ID=1mA
- V VDS=VGS, ID=250uA
- S VDS=10V, ID=6A
10 uA VGS= 10V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 30 m VGS=4.5V, ID=6.0A
- 45
VGS=2.5V, ID=5.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 12.5 -
ID=6A
Qgs - 1 - nC VDS=20V
Qgd - 6.5 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-5-
-9-
- 26.2 -
- 6.8 -
VDS=10V
ID=1A
ns VGS=5V
RG=3.3
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 355 -
- 190 -
- 85 -
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.2
1.67
Unit Test Conditions
V IS=1.7A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;135
/W when mounted on Min. copper pad.
GSS9926E
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Characteristics Curve
ISSUED DATE :2005/01/07
REVISED DATE :2005/09/29C
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSS9926E
Fig 6. Type Power Dissipation
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ISSUED DATE :2005/01/07
REVISED DATE :2005/09/29C
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS9926E
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/01/07
REVISED DATE :2005/09/29C
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS9926E
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