SIGC06T60G.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 SIGC06T60G 데이타시트 다운로드

No Preview Available !

www.DataSheet4U.com
IGBT3 Chip
SIGC06T60G
FEATURES:
600V Trench & Field Stop technology
low VCE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
This chip is used for:
power module
discrete components
Applications:
drives
white goods
resonant applications
C
G
E
Chip Type
SIGC06T60G
VCE
ICn
Die Size
600V 10A 2.44 x 2.42 mm2
Package Ordering Code
sawn on foil
Q67050-
A4344-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.44 x 2.42
1.558 x 1.577
mm2
0.361 x 0.513
5.9 / 3.6
mm2
70 µm
150 mm
0 deg
2485 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

No Preview Available !

SIGC06T60G
MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, Tj= 25 °C
DC collector current, limited by Tjmax
Pulsed collector current, tp limited by Tjmax
Gate emitter voltage
Operating junction and storage temperature
SC data, VGE = 15V, VCC = 360V
Tvj = 150°C
Tvj = 25°C
1 ) depending on thermal properties of assembly
Symbol
VCE
IC
Icpuls
VGE
Tj, Tstg
tp
Value
600
1)
30
±20
-40 ... +175
6
8
Unit
V
A
A
V
°C
µs
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min. typ.
max.
Unit
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
RGint
VGE=0V , IC= 2mA
VGE=15V, IC=10A
IC=150µA , VGE=VCE
VCE=600V , VGE=0V
VCE=0V , VGE=20V
600
1.1 1.5 1.9
5.0 5.8 6.5
0.6
300
none
V
µA
nA
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Ci s s
Co s s
Cr s s
V C E= 2 5 V ,
VGE=0V,
f=1MHz
min.
Value
typ. max.
551
40
17
Unit
pF
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Parameter
Symbol
Conditions
Value 2)
min. typ. max.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Tj=125°C
V C C = 30 0 V ,
IC=10A ,
VGE=-15/15V,
RG= 27
12
13
120
130
Unit
ns
2) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

No Preview Available !

CHIP DRAWING:
SIGC06T60G
Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

No Preview Available !

FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
SIGC06T60G
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005