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IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100µm chip
positive temperature coefficient
easy paralleling
SIGC25T60NC
This chip is used for:
IGBT Modules
Applications:
drives
C
G
E
Chip Type
SIGC25T60NC
VCE
ICn
Die Size
600V 30A 4.5 x 5.71 mm2
Package Ordering Code
sawn on foil
Q67050-A4143-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
4.5 x 5.71
mm2
25.69 / 21.4
2x( 2.18x1.58 )
0.68 x 1.08
100 µm
150 mm
270 deg
566
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, 500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7262-M, Edition 2, 28.11.2003

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SIGC25T60NC
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
DC collector current, limited by Tjmax
VCE
IC
600 V
1) A
Pulsed collector current, tp limited by Tjmax
Icpuls
90 A
Gate emitter voltage
VGE
±20 V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Tstg
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
V(BR)CES VGE=0V, IC=1000µA 600
VCE(sat)
VGE=15V, IC=30A
1.7 2.0 2.5 V
VGE(th)
IC=700µA, VGE=VCE 4.5 5.5 6.5
ICES
VCE=600V, VGE=0V
2.1 µA
IGES
VCE=0V, VGE=20V
120 nA
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Ci s s
Co s s
Cr s s
V C E= 2 5 V
VGE=0V
f=1M Hz
min.
-
-
-
Value
typ. max.
1350
tbd
120
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Conditions 1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Tj=125°C
VCC=300V
IC=30A
VGE=± 15V
RG= 8 . 2
1) values also influenced by parasitic L- and C- in measurement and package.
min.
-
Value
typ. max.
21
Unit
ns
-8
- 110
- 25
Edited by INFINEON Technologies AI PS DD HV3, L 7262-M, Edition 2, 28.11.2003

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CHIP
DRAWING:
SIGC25T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7262-M, Edition 2, 28.11.2003

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SIGC25T60NC
FURTHER ELECTRICAL CHARACTERISTICS :
This chip data sheet refers to the
device data sheet
FS 30 R06 XL4
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7262-M, Edition 2, 28.11.2003