G1332E.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 G1332E 데이타시트 다운로드

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Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
G1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
600m
600mA
Description
The G1332E provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*2KV ESD Rating (Per MIL-STD-883D)
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Ratings
20
±5
600
470
2.5
1.0
0.008
-55 ~ +150
Value
125
Unit
V
V
mA
mA
A
W
W/
Unit
/W
G1332E
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ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.02
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 1 - S VDS=5V, ID=600mA
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ±5V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 10 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 600 m VGS=4.5V, ID=600mA
- 1200
VGS=2.5V, ID=400mA
1.3 2
ID=600mA
0.3 - nC VDS=16V
0.5 -
VGS=4.5V
4-
VDS=10V
10 -
ID=600mA
15
-
ns VGS=10V
RG=3.3
2-
RD=16.7
38 60
VGS=0V
17 - pF VDS=10V
12 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit Test Conditions
V IS=300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
G1332E
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Characteristics Curve
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
G1332E
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G1332E
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