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Pb Free Plating Product
ISSUED DATE :2006/03/01
REVISED DATE :
G138
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
50V
3.5
500mA
Description
The G138 has been designed to minimize on-state resistance, while provide rugged, reliable and fast switching
performance.
The G138 is universally used for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Ratings
50
±20
500
400
800
225
0.002
-55 ~ +150
Value
556
Unit
V
V
mA
mA
mA
mW
W/
Unit
/W
1/4

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ISSUED DATE :2006/03/01
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
50
-
-
V VGS=0, ID=250uA
VGS(th)
0.5
-
2.0
V VDS=VGS, ID=1mA
gfs - 500 - mS VDS=10V, ID=220mA
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 ) IDSS - - 1 uA VDS=50V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 3.5
- 6.0
VGS=10V, ID=220mA
VGS=4.5V, ID=220mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Ciss - - 50
VGS=0V
Coss - - 25 pF VDS=25V
Crss - - 5
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.5 V IS=100mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
/W when mounted on Min. copper pad.
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Characteristics Curve
ISSUED DATE :2006/03/01
REVISED DATE :
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Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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