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Pb Free Plating Product
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
G138K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
50V
2
640mA
Description
The G138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The G138K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
50
20
640
500
950
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
mA
mA
mA
W
W/
Unit
/W
1/4

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ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
50
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.06
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V VDS=VGS, ID=1mA
Forward Transconductance
gfs - 600 - mS VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS - - 10 uA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=50V, VGS=0
- 100 uA VDS=40V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-2
VGS=10V, ID=500mA
-4
VGS=4.5V, ID=400mA
1 1.6
ID=600mA
0.5 - nC VDS=50V
0.5 -
VGS=4.5V
12 -
VDS=30V
10 -
ID=600mA
56
-
ns VGS=10V
RG=3.3
29 -
RD=52
32 50
VGS=0V
8 - pF VDS=25V
6-
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.2 V IS=200mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
/W when mounted on Min. copper pad.
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Characteristics Curve
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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