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Pb Free Plating Product
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
G152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
0.3
-0.7A
Description
The G152B provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Low On-State Resistance:0.3 (max)
Ultra High Speed Switching
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery System
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-0.7
-2.8
0.5
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
W
W/
Unit
/W
1/4

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ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
-0.1
-
V/ Reference to 25 , ID=-1mA
Gate Threshold Voltage
VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-1mA
Forward Transconductance
gfs
- 1.5 -
S VDS=-10V, ID=-0.4A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 12V
Drain-Source Leakage Current(Tj=25 ) IDSS - - -10 uA VDS=-20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
135 300 m VGS=-4.5V, ID=-0.4A
192 500
VGS=-2.5V, ID=-0.4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 5.2 10
ID=-0.7A
Qgs
- 1.36 -
nC VDS=-10.0V
Qgd - 0.6 -
VGS=-6.0V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
5
-
Tr
Td(off)
-
-
20
55
-
-
VDD=-10V
ns ID=-0.4A
VGS=-5V
Tf - 70 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 180 -
- 120 -
- 60 -
VGS=0V
pF VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
-1.1
Unit Test Conditions
V IS=-0.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270
/W when mounted on min. copper pad.
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Characteristics Curve
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
Fig 1. Drain Current v.s.
Drain-Source Voltage
Fig 2. Drain Current v.s.
Gate-Source Voltage
Fig 3. Drain-Source On-State Resistance
v.s. Gate-Source Voltage
Fig 4. Drain-Source On-State Resistance
v.s. Drain Current
Fig 5. Drain-Source On-State Resistance Fig 6. Gate-Source Cut-off Voltage Variance
v.s. Ambient Temperature
v.s. Ambient Temperature
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ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
Fig 7. Capacitance v.s. Drain-Source Voltage Fig 8. Switching Time v.s. Drain Current
Fig 9. Gate-Source Voltage
v.s. Gate Charge
Fig 10. Reverse Drain-Current
v.s. Source-Drain Voltage
Fig 11. Thermal Resistance
v.s. Pulse Width
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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