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Ordering number : ENA0542
2SA2203
SANYO Semiconductors
DATA SHEET
2SA2203 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
DC / DC converter, Relay drivers, lamp drivers, motor drivers.
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=--50V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
Ratings
--60
--60
--60
--7
--3
--5
--600
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
min
200
Ratings
typ
max
Unit
--1 µA
--1 µA
400
400 MHz
25 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806EA SY IM TC-00000305 No. A0542-1/4

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Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2SA2203
Symbol
Conditions
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--1A, IB=--50mA
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10µA, IE=0A
IC=--100µA, RBE=0
IC=--1mA, RBE=
IE=--10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--60
--60
--60
--7
Ratings
typ
--110
--90
--0.85
35
480
28
max
--220
--180
--1.2
Unit
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7518-003
Package Dimensions
unit : mm (typ)
7003-003
6.5 2.3
5.0 0.5
4
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
50
VR
1k
+
220µF
VBE=5V
OUTPUT
RL
+
470µF
VCC= --30V
IC= --10IB1=10IB2= --0.5A
No. A0542-2/4

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2SA2203
IC -- VCE
IC -- VBE
--3.0
--3.0
--2.5
--200mA --150mA
--100mA
VCE= --2V
--2.5
--2.0
--50mA
--2.0
--1.5 --20mA
--1.0 --5mA
--0.5
0
0
1000
7
IB=0mA
--0.05 --0.10 --0.15 --0.20 --0.25 --0.30 --0.35 --0.40 --0.45 --0.50
Collector-to-Emitter Voltage, VCE -- V IT11642
hFE -- IC
VCE= --2V
5 Ta=75°C
25°C
3
--25°C
2
--1.5
--1.0
--0.5
0
0
1000
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
fT -- IC
IT11643
VCE= --10V
100
7
5
3
--0.01
100
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
Cob -- VCB
23 5
IT11644
f=1MHz
7
5
3
2
10
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
7
5 IC / IB=20
5 7 --100
IT11646
3
2
--0.1
7
5
3
2
--0.01
7
--0.01
Ta=75°C--25°C
25°C
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
IT11648
100
7
5
3
--0.01 2 3
5
IC / IB=10
3
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
VCE(sat) -- IC
2
23 5
IT11645
--0.1
7
5
3
2
--0.01
7
5
--0.01
3
Ta=75°C--25°C
25°C
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
VBE(sat) -- IC
23 5
IT11647
IC / IB=10
2
--1.0
Ta= --25°C
7
25°C 75°C
5
3
--0.01
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
IT11649
No. A0542-3/4

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2SA2203
--10
7 ICP= --5A
5
3 IC= --3A
2
--1.0
7
5
3
2
ASO
100ms
500µs
10ms
1ms
<10µs
--0.1
7
5
3
2 Tc=25°C
--0.01 Single pulse
--1.0 2 3
5 7 --10
23
5 7 --100
Collector-to-Emitter Voltage, VCE -- V IT11650
PC -- Ta
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11652
--10
7 ICP= --5A
5
3 IC= --3A
2
--1.0
7
5
3
2
ASO
100ms
1m5s00µs
10ms
DC operation
<10µs
--0.1
7
5
3
2 Ta=25°C
--0.01 Single pulse
--0.1 2 3 5 7 --1.0
2 3 5 7 --10
23
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
17.5
5 7 --100
IT11651
15.0
12.5
10.0
7.5
5.0
2.5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT11653
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0542-4/4