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Ordering number : ENA0233
2SA2207
SANYO Semiconductors
DATA SHEET
2SA2207 PNP Epitaxial Planar Silicon Transistor
50V / 13A High-Speed Switching Applications
Applications
High-speed switching applications (switching regulators, drive circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--270mA
VCE=--2V, IC=--8.1A
VCE=--5V, IC=--700mA
VCB=--10V, f=1MHz
Ratings
--50
--50
--6
--13
--15
--2
1
20
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
50
Ratings
typ
max
--10
--10
500
Unit
µA
µA
110 MHz
100 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306EA TI IM TC-00000352 No. A0233-1/4

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2SA2207
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--6A, IB=--300mA
IC=--6A, IB=--300mA
IC=--100µA, IE=0A
IC=--1mA, RBE=
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
--250
--50
--50
--6
80
265
43
max
--500
--1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7518-003
Package Dimensions
unit : mm (typ)
7003-003
6.5 2.3
5.0 0.5
4
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR RB
50+
100µF
OUTPUT
+
470µF
RL
VBE=5V
VCC= --25V
IC=20IB1= --20IB2= --6.7A
IC -- VCE
--10
--9
--200mA
--140mA
--120mA
--100mA
--8 --80mA
--7
--6
--180mA --160mA
--60mA
--40mA
--5
--4 --20mA
--3
--2
--1
0 IB=0mA
0
--0.5
--1.0
--1.5
--2.0
Collector-to-Emitter Voltage, VCE -- V IT10080
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
IC -- VCE
--60mA--50mA --40mA
--70mA
--30mA
--20mA
--10mA
--5mA
IB=0mA
--0.2
--0.4
--0.6
--0.8
--1.0
Collector-to-Emitter Voltage, VCE -- V IT10081
No. A0233-2/4

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2SA2207
1000
7
5
3
2
100
7
5
3
2
hFE -- IC
Ta=75°C
25°C
--25°C
VCE= --2V
1000
7
5
3
2
100
7
5
3
2
hFE -- IC
Ta=25°C
10
--0.01 2 3
3
2
5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT10082
fT -- IC
VCE= --10V
100
7
5
3
2
10
--0.01 2 3
5
3
5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT10083
Cob -- VCB
f=1MHz
2
100
7
5
3
2
10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC -- A
VCE(sat) -- IC
--1.0
7 IC / IB=20
5
3
5 7 --10
IT10084
3
2
--0.1
7
5
3
2
--0.01
Ta=75-°-2C5°C
25°C
7
5
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
--14
VCE=--2V
Collector Current, IC -- A
IC -- VBE
5 7 --10 2 3
IT10086
--12
--10
--8
--6
--4
--2
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE -- V IT10118
10
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7
Collector-to-Base Voltage, VCB -- V IT10085
7
5 IC / IB=50
VCE(sat) -- IC
3
2
--1.0
7
5
3
2
--0.1
7
5
Ta=7--52°5C°C
3
2
25°C
--0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT10087
VBE(sat) -- IC
3
IC / IB=20
2
--1.0
Ta= --25°C
7 25°C
75°C
5
3
--0.01 2 3
5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT10089
No. A0233-3/4

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2SA2207
3
2 ICP= --15A
--10
7
IC= --13A
5
3
2
Forward Bias A S O
100ms
--1.0
7
5
3
2
--0.1
7
5
3
2 Tc=25°C
Single pulse
--0.01
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7
Collector-to-Emitter Voltage, VCE -- V IT11944
PC -- Tc
25
1.2
1.0
0.8
0.6
0.4
0.2
0
0
PC -- Ta
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11945
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT11946
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the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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Any and all information described or contained herein are subject to change without notice due to
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0233-4/4