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Ordering number : ENA0235
2SA2209
SANYO Semiconductors
DATA SHEET
2SA2209
PNP Epitaxial Planar Silicon Transistor
50V / 15A High-Speed Switching
Applications
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--330mA
VCE=--2V, IC=--10A
VCE=--10V, IC=--700mA
VCB=--10V, f=1MHz
Ratings
--50
--50
--6
--15
--20
--3
1
20
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
50
Ratings
typ
max
--10
--10
500
Unit
µA
µA
120 MHz
140 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306EA TI IM TC-00000354 No. A0235-1/4

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2SA2209
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--7.5A, IB=--375mA
IC=--7.5A, IB=--375mA
IC=--100µA, IE=0A
IC=--1mA, RBE=
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
--250
--50
--50
--6
80
300
45
max
--500
--1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7518-003
Package Dimensions
unit : mm (typ)
7003-003
6.5 2.3
5.0 0.5
4
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR RB
50+
100µF
+
470µF
OUTPUT
RL
VBE=5V
VCC= --25V
IC=20IB1= --20IB2= --7A
IC -- VCE
--15
--14
--13
--12
--11
--250mA
--300mA
--350mA
--200mA
--150mA
--10
--9
--450mA--400mA
--100mA
--8
--7 --50mA
--6
--5
--4 --20mA
--3
--2
--1
0
IB=0mA
0 --0.5 --1.0 --1.5 --2.0
Collector-to-Emitter Voltage, VCE -- V IT09987
IC -- VCE
--8
--7
--100mA
--120mA
--80mA
--60mA
--6
--140mA
--40mA
--5 --160mA
--4
--20mA
--3
--2 --10mA
--1
0 IB=0mA
0 --0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE -- V IT09988
No. A0235-2/4

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2SA2209
--16
VCE= --2V
--14
--12
--10
IC -- VBE
hFE -- IC
1000
VCE= --2V
7
5
Ta=75°C
3 25°C
2 --25°C
--8
--6
--4
--2
0
0
1000
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE -- V IT09989
hFE -- IC
Ta=25°C
100
7
5
3
2
10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT09900
fT -- IC
1000
7 VCE= --10V
5
3
2
100
7
5
3
2
10
--0.01 2 3
1000
7
5
5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10
Collector Current, IC -- A
Cob -- VCB
23 5
IT09991
f=1MHz
3
2
100
7
5
3
2
10
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7
Collector-to-Base Voltage, VCB -- V IT09993
5
3 IC / IB=50
VCE(sat) -- IC
2
--1.0
7
5
3
2
--0.1
7
5
3 Ta= --25°C
Ta=75-°-2C5°C
25°C
2 75°C
--0.01 25°C
--0.01 2 3 5 7--0.1
23
5 7--1.0
23
5 7 --10
23
Collector Current, IC -- A
IT09995
100
7
5
3
2
10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC -- A
VCE(sat) -- IC
--1.0
7 IC / IB=20
5
3
5 7 --10
IT09992
3
2
--0.1
7
5
3
2
Ta= --25°C
--0.01
7
75°C
5 25°C
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC -- A
VBE(sat) -- IC
3
5 7 --10 2 3
IT09994
IC / IB=20
2
--1.0
Ta= --25°C
7
5 75°C
25°C
3
2
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT09996
No. A0235-3/4

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2SA2209
5
3
2
ICP= --20A
--10 IC= --15A
7
5
3
2
Forward Bias A S O
100ms
--1.0
7
5
3
2
--0.1
7
5
3
2
Tc=25°C
Single pulse
--0.01
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7
Collector-to-Emitter Voltage, VCE -- V IT11947
PC -- Tc
25
1.2
1.0
0.8
0.6
0.4
0.2
0
0
PC -- Ta
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11945
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT11946
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0235-4/4