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Ordering number : ENN7468A
CPH5813
CPH5813
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Features
Composite type with a P-Channel Sillicon MOSFET (MCH3318) and a Schottky Barrier Diode (SBS010M)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QP
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--12
±10
--2
--8
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
15
15
2
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1004 TS IM / 32803 TS IM TA-3804 No.7468-1/5

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CPH5813
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
Rth(j-a)
ID=--1mA, VGS=0
VDS=--12V, VGS=0
VGS=±8.0V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1A
ID=--1A, VGS=--4.5V
ID=--0.5A, VGS=--2.5V
ID=--0.2A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--2.0A
VDS=--6V, VGS=--4.5V, ID=--2.0A
VDS=--6V, VGS=--4.5V, ID=--2.0A
IS=--2.0A, VGS=0
IR=1.5mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
min typ
--12
--0.3
2.0 2.9
110
160
220
310
90
80
14
53
53
52
4.6
0.7
1.3
--0.89
15
0.27
0.30
65
138
Unit
max
V
--10 µA
±10 µA
--1.0 V
S
145 m
225 m
330 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
0.32
0.35
600
15
V
V
V
µA
pF
ns
°C/W
Package Dimensions
unit : mm
2171
2.9
54
3
0.15
0.05
1
0.95
2
0.4
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
543
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No.7468-2/5

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CPH5813
Switching Time Test Circuit
[MOSFET]
VIN
0V
--4.5V
VIN
VDD= --6V
ID= --1.0A
RL=6.0
PW=10µs
D.C.1%
D VOUT
G
CPH5813(MOSFET)
P.G 50S
trr Test Circuit
[SBD]
Duty10%
50
10µs
100
--5V
10
trr
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
400
ID -- VDS
[MOSFET]
--1.8V
--1.5V
VGS= --1.0V
--0.1 --0.2 --0.3 --0.4 --0.5
Drain-to-Source Voltage, VDS -- V IT04314
RDS(on) -- VGS [MOSFET]
Ta=25°C
300
--1.0A
ID= --0.5A
200
100
0
0 --1 --2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V IT04316
10
yfs-- ID
[MOSFET]
VDS= --6V
7
5
3 25°C
2 Ta= --25°C
75°C
1.0
7
5
--0.1
23
5 7 --1.0
23
5
Drain Current, ID -- A
IT04318
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
400
ID -- VGS
[MOSFET]
VDS= --6V
--0.5 --1.0 --1.5 --2.0 --2.5
Gate-to-Source Voltage, VGS -- V IT04315
RDS(on) -- Ta [MOSFET]
300
200
ID=
ID=
ID=
--0.2A,
--0.5A,
--1.0A,
VGS=
VGS=
VGS=
--1.8V
--2.5V
--4.5V
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04317
--10
IF -- VSD
[MOSFET]
7 VGS=0
5
3
2
--1.0
7
5
3
2
--0.1
--0.4
--0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V IT04319
No.7468-3/5