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Ordering number : EN8688
CPH5846
SANYO Semiconductors
DATA SHEET
CPH5846
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
Composite type with a P-Channel Sillicon MOSFET (MCH3309) and a Schottky Barrier Diode (SS10015M)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
Low voltage drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : XY
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--20
±10
--1.5
--6.0
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
15
15
1
3
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106PE SY IM TC-00000270 No.8688-1/6

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CPH5846
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--800mA
ID=--800mA, VGS=--4V
ID=--400mA, VGS=--2.5V
ID=--70mA, VGS=--1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
IS=--1.5A, VGS=0V
IR=0.5mA
IF=0.3A
IF=0.5A
VR=6V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Ratings
min typ max
Unit
--20
--0.4
1.3 2.3
180
240
350
290
40
25
10
35
32
27
3.2
0.8
0.6
--0.87
V
--1 µA
±10 µA
--1.3 V
S
235 m
340 m
600 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
15 V
0.31
0.34 V
0.34
0.37 V
90 µA
20 pF
10 ns
Package Dimensions
unit : mm (typ)
7017A-005
2.9
5 43
1
0.95
2
0.4
0.15
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
54
3
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
1 2 Top view
No.8688-2/6

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Switching Time Test Circuit
[MOSFET]
VIN
0V
--4V
VIN
PW=10µs
D.C.1%
G
VDD= --10V
ID= --800mA
RL=12.5
D VOUT
MCH5846
P.G 50S
CPH5846
trr Test Circuit
[SBD]
Duty10%
50
10µs
100
--5V
10
trr
ID -- VDS
[MOSFET]
--2.0
--1.8
--1.6
--1.4
--1.2
VGS= --1.5V
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
600
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT02731
RDS(on) -- VGS [MOSFET]
Ta=25°C
500
400
--0.8A
300
ID= --0.4A
200
100
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT02733
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
500
ID -- VGS
[MOSFET]
VDS= --10V
--0.5
--1.0
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V IT02732
RDS(on) -- Ta
[MOSFET]
400
300
200
IDID==---0-.04.A8A, V, VGGS=S=--2--.45.V0V
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02734
No.8688-3/6