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Ordering number : ENA0847
CPH6621
SANYO Semiconductors
DATA SHEET
CPH6621
Features
Low ON-resistance.
2.5V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
Mounted on a ceramic board (900mm20.8mm)
Ratings
--20
±10
--1.5
--6.0
0.9
1.2
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WH
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--4V
ID=--0.4A, VGS=--2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
min
--20
--0.4
1.38
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--1.3 V
2.3 S
180 235 m
240 340 m
290 pF
40 pF
25 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60607PE TI IMTC-00000748 No. A0847-1/4

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CPH6621
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
IS=--1.5A, VGS=0V
Ratings
min typ max
Unit
10 ns
35 ns
32 ns
27 ns
3.2 nC
0.8 nC
0.6 nC
--0.87
--1.5 V
Package Dimensions
unit : mm (typ)
7018A-010
2.9
654
0.15
0.05
12
0.95
3
0.4
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
Electrical Connection
654
123
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10µs
D.C.1%
G
VDD= --10V
ID= --0.8A
RL=12.5
D VOUT
CPH6621
P.G 50S
ID -- VDS
--2.0
--1.8
--1.6
--1.4
--1.2
VGS= --1.5V
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT02654
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
ID -- VGS
VDS= --10V
--0.5 --1.0 --1.5 --2.0 --2.5
Gate-to-Source Voltage, VGS -- V IT02655
No. A0847-2/4

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RDS(on) -- VGS
600
500
400
300
ID= --0.4A --0.8A
200
100
CPH6621
Ta=25°C
500
400
300
200
100
RDS(on) -- Ta
I DI=D-=-0-.-40A.8, AV,GVSG= S--=2.-5-4V.0V
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT02656
10 yfs-- ID
7 VDS= --10V
5
3
2
1.0
7
5
Ta=
--25°C
75°C
25°C
3
2
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
100
VDD= --10V
Drain Current, ID -- A
SW Time -- ID
7 VGS= --4V
5 td(off)
23
IT02658
3
tf
2
t r td(on)
10
7
5
3
3 5 7 --0.1
2 3 5 7 --1.0
--4
VDS= --10V
ID= --1.5A
Drain Current, ID -- A
VGS -- Qg
23 5
IT02660
--3
--2
--1
0
0 0.5 1 1.5 2 2.5 3 3.5
Total Gate Charge, Qg -- nC
IT04051
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02657
IS -- VSD
--10
7 VGS=0V
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
1000
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V IT02659
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5 Coss
3 Crss
2
10
0 --5 --10 --15 --20
Drain-to-Source Voltage, VDS -- V IT02661
ASO
--10
7 IDP= --6.0A
5
3
2 ID= --1.5A
--1.0
PW10µs
10ms1m1s00µs
7
5
3
2
Operation in this
--0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (900mm20.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT12454
No. A0847-3/4