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Agilent IAM-93516 High Linearity
Integrated GaAs Mixer
Data Sheet
Description
Agilent Technologies’s IAM-
93516 is a high linearity GaAs
FET Mixer using 0.5um
enhancement mode pHEMT
technology. This device houses
in a 3x3 LPCC package. The
IAM-93516 has a built-in LO
buffer amplifier and an IF
amplification stage that serve
as an ideal solution for
reducing board space and
delivering excellent high IIP3,
gain and isolation with a low
LO drive power. The device is
designed with a differential
configuration to provide good
noise immunity. The LO port
is 50 ohm matched and can be
driven differential or single
ended. An interstage match is
introduced between the mixer
and amplifier stage to allow
device tuning at the desired
RF and LO frequency. The
interstage match can be a
simple low pass, high pass or
intermediate frequency trap.
The amplifier output port is
200 ohm matched and fully
differential. The simple
matching at the RF port
provides for optimum input
return loss, noise figure and
IIP3 performance.
The IAM-93516 is ideally
suited for frequency down
conversion for base station
radio card receiver, microwave
link receiver, MMDS,
modulation and demodulation
for receiver and general
purpose resistive FET mixer,
which require high linearity.
All devices are 100% RF and
DC tested.
Applications
Frequency down converter for
base station radio card,
microwave link transceiver, and
MMDS
Modulation and demodulation for
receiver
General purpose resistive FET
mixer for other high linearity
applications
Features
DC =5V @ 111mA (Typ.)
RF =1.91 GHz, PinRF = -10 dBm;
LO =1.7 GHz, PinLO = 0 dBm;
IF = 210 MHz unless otherwise
specified
High Linearity: 23.1 dBm IIP3(typ)
Conversion Gain: 9.4 dB typical
Low Noise Figure: 11.6 dB
Wide band operation:
400-3000 MHz RF & LO input
70 – 300 MHz IF output
Fully differential or single ended
operation
High P1dB: 19.3 dB typical
Consistent RF performance over
LO Power
Low current consumption: 5V@
111mA typical
Excellent uniformity in product
specifications
3mm x 3mm x 0.9mm LPCC
package
MTTF > 300 years[1]
MSL-1 and Lead-free.

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Pin Connections and Package Marking
Top View
Note:
Package marking provides orientation and identification
“M2” = Device Code
“X” = Month code indicates the month of manufacture
+VDD 5
Interstage Match
MIX_OUT+ 3 2 RF+ 1 IFA_IN+
6
LO+
LO Buffer
72
LO --
Mixer
3pF
280 ohm
3pF
Amplifier
+VDD
14
IF+
16
13
IF -
MIX_OUT - 10 11 RF - 12 IFA_IN -
Interstage Match
1.0 Absolute Maximum Ratings [1]
Symbol
VD
PinRF
PinLO
TCH
TSTG
θch_b
Parameter
Supply Voltage [2]
CW RF Input Power [2]
CW LO Input Power [2]
Channel Temperature
Storage Temperature
Thermal Resistance [4]
Units
V
dBm
dBm
°C
°C
°C/W
Absolute maximum
7
30
18
150
-65 to 150
39
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and TA = 25°C.
3. Board (package belly) temperature TB is 25°C. Derate 25 mW/°C for TB > 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150o C Liquid Crystal Measurement method.
2.0 Product Consistency Distribution Charts [5,6]
400
Stdev=0.74
300
-3 Std
200
+3 Std
100
0
107 108 109 110 111 112 113 114
Id
Figure 1. ID (mA) [7] Nominal = 111.2mA
180
150 Stdev = 0.14
120
-3 Std
90
+ 3 Std
60
30
0
8.8 9.0 9.2 9.4 9.6 9.8
180
150 Stdev = 0.5
120
90 -3 Std
60
30
0
21 22
23
+3 Std
24 25
Figure 2. GAIN (dB) [8] Nominal = 9.4dB
Figure 3. IIP3 (dBm) [8] Nominal = 23.1dBm
2

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3.0 IAM-93516 Electrical Specifications[6,8]
TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz, PinLO = 0dBm (unless otherwise specified)
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Id [7] Device Current
mA
95.0
111.2
125.0
GC
IIP3 [8]
Conversion Gain
Output Third Order Intercept Point
dB 7.9
dBm 20.5
9.4 10.9
23.1 -
NF SSB Noise Figure
dB -
11.6 -
P1dB
Output Power at 1dB Gain Compression
dBm
-
19.3 -
RLRF
RLLO
RLIF
ISOLL-R
ISOLL-I
ISOLR-L
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
dB -
dB -
dB -
dB -
dB -
dB -
12.0 -
20.0 -
11.0 -
26.0 -
20.0 -
32.0 -
Notes:
5. Distribution data sample size is 510 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
6. Measurements were made on a production test board, which represents a trade-off between optimal Gain, IIP3, NF, P1dB and isolation. Board losses
of 0.1dB at the RF input and IF amplifier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s supplied s-
parameter file is also compensated. The total IF amplifier output loss is 0.67dB.
7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA.
8. Gain, P1dB, isolation and return loss test conditions: FRF =1.91GHz, FLO = 1.7GHz, FIF = 210MHz, PinRF = -10dBm, PinLO = 0dBm.
IIP3 test condition: FRF1 = 1.91GHz, FRF2 = 1.89GHz, FLO = 1.7GHz, PinRF = -10dBm, PinLO = 0dBm.
4.0 IAM-93516 Typical Performance[9,10]
TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz (unless otherwise specified)
1nH
39nH 22 Ohm
18pF
LO +
1.5nH
RF
1.5pF
LO -
3.3nH
3.3nH
0.4pF 1.5pF
Interstage Match
40nH
1000pF
Balun Transformer
Toko B4F
617DB-1018
IF
1000pF
Interstage Match
1nH
39nH 22 Ohm
18pF
0.4pF 1.5pF
40nH
Figure 4. IAM-93516 demoboard schematic optimally tuned at FRF = 1.91GHz and FLO = 1.7GHz
3